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Cw Laser-Recrystallized Polysilicon as A Device-Worthy Material

Published online by Cambridge University Press:  15 February 2011

James F. Gibbons
James F. Gibbons
Affiliation:
Stanford Electronics laboratories, Stanford, California 94305
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Abstract

The basic crystallographic and electronic properties of cw laser recrystallized thin polysilicon films are presented and shown to be suitable for fabrication of MOSFET devices. Devices and simple integrated circuits fabricated to explore the potential of this material have electrical characteristics similar to devices fabricated on single crystal material and offer significant promise for future applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 449
Copyright
Copyright © Materials Research Society 1981

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References

REFERENCES

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