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Damage Formation in Semiconductors During Mev Ion Implantation

Published online by Cambridge University Press:  25 February 2011

T. P. Sjoreen ,
O. W. Holland ,
M. K. El-Ghor  and
C. W. White
T. P. Sjoreen
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
O. W. Holland
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
M. K. El-Ghor
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
C. W. White
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
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Abstract

Damage produced by 1.0-2.5 MeV self-ion and O-ion implantation into Si and Ge single crystals has been characterized by cross-sectional electron microscopy and ion channeling. In Si, it is observed that the damage morphology varies substantially along the ion's track. Near the end-of-range of the ion, damage accumulation is very similar to that which occurs during medium- to low-energy implantation (i.e., damage increases monotonically with dose until the lattice is made completely amorphous). In front of this end-of-range region, however, damage saturates at a very low level for moderate implantation fluences. A model based on homogeneous damage nucleation in Si is discussed. For Ge, damage accumulation is very different; a monotonic increase of damage with dose is observed over the entire range of the ion. Possible mechanisms responsible for the differences between Si and Ge are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 593
Copyright
Copyright © Materials Research Society 1989

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References

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