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The Dangling Bond in Undoped Amorphous Hydrogenated Silicon: Trap or Recombination Center?

Published online by Cambridge University Press:  28 February 2011

M. A. Parker ,
K. A. Conrad  and
E. A. Schiff
M. A. Parker
Affiliation:
Department of Physics, Syracuse University Syracuse, N. Y. 13244-1130U. S. A.
K. A. Conrad
Affiliation:
Department of Physics, Syracuse University Syracuse, N. Y. 13244-1130U. S. A.
E. A. Schiff
Affiliation:
Department of Physics, Syracuse University Syracuse, N. Y. 13244-1130U. S. A.
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Abstract

The role of the neutral dangling bond defect upon photocarrier processes in undoped amorphous hydrogenated silicon (a-Si:H) is discussed. The evidence that the dangling bond is a simple recombination center is reviewed, and it is shown that this model does not account for photocurrent response time measurements. Experimental data pertinent to the role of electrical contacts upon response time measurements are presented, and it is concluded that contact effects do not account for response-time measurements. The possibility that the dangling bond is primarily an electron trap is discussed.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 125
Copyright
Copyright © Materials Research Society 1986

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