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DC Characteristics of Nanometer-Gatelength GaAS Mesfets

Published online by Cambridge University Press:  26 February 2011

K. Nummila ,
M. Tong ,
A. A. Ketterson  and
I. Adesida
K. Nummila
Affiliation:
Coordinated Science Laboratory, Center for Compound Semiconductor Microelectronics, and Department of Electrical and Computer Engineering, University of Illinois, 208 N. Wright St., Urbana-Champaign, IL 61801.
M. Tong
Affiliation:
Coordinated Science Laboratory, Center for Compound Semiconductor Microelectronics, and Department of Electrical and Computer Engineering, University of Illinois, 208 N. Wright St., Urbana-Champaign, IL 61801.
A. A. Ketterson
Affiliation:
Coordinated Science Laboratory, Center for Compound Semiconductor Microelectronics, and Department of Electrical and Computer Engineering, University of Illinois, 208 N. Wright St., Urbana-Champaign, IL 61801.
I. Adesida
Affiliation:
Coordinated Science Laboratory, Center for Compound Semiconductor Microelectronics, and Department of Electrical and Computer Engineering, University of Illinois, 208 N. Wright St., Urbana-Champaign, IL 61801.
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Abstract

High-resolution electron-beam lithography has been used to fabricate GaAs MESFETs with gate-lengths ranging from 1 μm down to 30 nm. Devices were fabricated on two MESFET epitaxial layers; one with undoped GaAs-buffer layer while the other had a p- -GaAs-buffer layer. The DC characteristics including transconductance, output conductance, threshold voltage, and subthreshold current of these devices have been measured. Devices on both epitaxial layers exhibited significant short-channel effects. A negative threshold voltage shift and an increase in the subthreshold current were observed. These effects become prominent as the device aspect ratio (gate length/channel thickness) falls below 5. It is shown however that the effects were considerably suppressed in the layer with p- -GaAs buffer due to better confinement of electrons in the channel.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 563
Copyright
Copyright © Materials Research Society 1992

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References

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