Hostname: page-component-76fb5796d-wq484 Total loading time: 0 Render date: 2024-04-29T18:50:53.154Z Has data issue: false hasContentIssue false
  • English
  • Français

Deep Level Transient Spectroscopy Study of Thin Film Diamond

Published online by Cambridge University Press:  26 February 2011

K. Srikanth ,
S. Ashok ,
W. Zhu ,
A. Badzian  and
R. Messier
K. Srikanth
Affiliation:
Center for electronic materials & processing and department of engineering science & mechanics
S. Ashok
Affiliation:
Center for electronic materials & processing and department of engineering science & mechanics
W. Zhu
Affiliation:
Materials research laboratory The Pennsylvania State University, University Park, PA 16802.
A. Badzian
Affiliation:
Materials research laboratory The Pennsylvania State University, University Park, PA 16802.
R. Messier
Affiliation:
Materials research laboratory The Pennsylvania State University, University Park, PA 16802.
Get access

Abstract

We have demonstrated the applicability of DLTS to semiconducting diamond thin films. This paper includes details on the capacitance-voltage measurements, the DLTS spectrum and the DLTS spectra as a function of bias. Our study was done with an aluminum Schottky contact on polycrystalline diamond film. We found a strong temperature dependence of the Schottky diode capacitance with a reduction of effective dopant concentration from 4 × 1014 cm−3 at 300K to 2 × 1014 cm−3 at 200K. The DLTS signal had a good signal to noise ratio, characteristic line-shape and clear peaks. The trap concentration was 8 × 1013 cm−3 (at 400/s rate window) with an activation energy of 0.31 eV and a capture cross section of 1.15 × 10−18 cm−2. The spectra showed a bias dependence of peak height and position.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 309
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Lomer, J. N. and Welbourn, C. W., Rad. Effects in semicon. edited by Urli, N. B. and Corbett, J. W., Conference series 31., 339 (1976).Google Scholar
2. Clark, C. D. and Mitchell, E. W. J., Rad. Effects in semicon. edited by Urli, N. B. and Corbett, J. W., Conference series, 45 (1976).Google Scholar
3. Collins, A. T., Rad. Effects in semicon. edited by Urli, N. B. and Corbett, J. W., Conference series, 346 (1976).Google Scholar
4. van Enckevort, W. J. P. and Lochs, H. G. M., J. Appl. Phys. 64, 433 (1988).Google Scholar
5. Lang, D. V., J. Appl. Phys. 45, 3023 (1974).Google Scholar
6. Lang, D. V., Topics in Appl. Phys. edited by P. Braunlich 37, 93 (1979).Google Scholar
7. Singh, A. and Anderson, W. A., J. Appl. Phys. 64, 3999 (1988).Google Scholar
8. Slowik, J. H. and Ashok, S., AppI. Phys. Lett. 49, 1784 (1986).Google Scholar
9. Gildenblat, G. Sh. et. al., Appl. Phys. Lett. 53 586 (1988).Google Scholar
10. Isett, L. C. and Chaudhuri, P. K., J. Appl. Phys. 55, 3605 (1984).Google Scholar