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Deep Levels in As-Grown and Electron-Irradiated P-type 4H-SiC

Published online by Cambridge University Press:  01 February 2011

Katsunori Danno  and
Tsunenobu Kimoto
Katsunori Danno
Affiliation:
k-danno@semicon.kuee.kyoto-u.ac.jp, Kyoto University, Department of Electronic Science and Engineering, Kyotodaigaku-katsura, Nishikyo, Kyoto, N/A, 615-8510, Japan, +81-75-383-2302, +81-75-383-2303
Tsunenobu Kimoto
Affiliation:
kimoto@kuee.kyoto-u.ac.jp, Kyoto University, Department of Electronic Science and Engineering, Kyotodaigaku-katsura, Nishikyo, Kyoto, N/A, 615-8510, Japan
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Abstract

Deep levels in as-grown and electron-irradiated p-type 4H-SiC have been investigated by deep level transient spectroscopy (DLTS). Three hole traps, namely HK2, HK3, and HK4, could be detected in the temperature range from 350K to 700K. Activation energies of the hole traps were estimated to be 0.84 eV for HK2, 1.27 eV for HK3, and 1.44 eV for HK4 from the Arrhenius plot of emission-time constants assuming temperature-independent capture cross section. By double-correlated DLTS (DDLTS), they were revealed to be donor-like (+/0) traps. The concentrations of HK3 and HK4 centers were clearly increased by low-energy (116 keV) electron irradiation. Based on thermal stability of the HK3 and HK4 centers up to 1350°C and the dependence of HK4 concentration on the electron fluence, they may originate from a complex including defect(s) caused by carbon displacement.

Keywords

deep level transient spectroscopy (DLTS)electron irradiationdefects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B06-04
Copyright
Copyright © Materials Research Society 2006

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