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Defect population and electrical properties of Ar+-laser crystallized polycrystalline silicon thin films

Published online by Cambridge University Press:  14 March 2011

S. Christiansen ,
M. Nerding ,
C. Eder ,
G. Andrae ,
F. Falk ,
J. Bergmann ,
M. Ose  and
H. P. Strunk
S. Christiansen
Affiliation:
Universität Erlangen-Nürnberg, Institut für Werkstoffwissenschaften-Mikrocharakterisierung, Cauerstr. 6, D-91058 Erlangen, Germany Universität Erlangen-Nürnberg, Institut für Werkstoffwissenschaften-Mikrocharakterisierung, Cauerstr. 6, D-91058 Erlangen, Germany, e-mail: sechrist@ww.uni-erlangen.de
M. Nerding
Affiliation:
Universität Erlangen-Nürnberg, Institut für Werkstoffwissenschaften-Mikrocharakterisierung, Cauerstr. 6, D-91058 Erlangen, Germany
C. Eder
Affiliation:
Universität Erlangen-Nürnberg, Institut für Werkstoffwissenschaften-Mikrocharakterisierung, Cauerstr. 6, D-91058 Erlangen, Germany
G. Andrae
Affiliation:
Institut für Physikalische Hochtechnologie, Winzerlaer Strasse 10, D-07745 Jena, Germany
F. Falk
Affiliation:
Institut für Physikalische Hochtechnologie, Winzerlaer Strasse 10, D-07745 Jena, Germany
J. Bergmann
Affiliation:
Institut für Physikalische Hochtechnologie, Winzerlaer Strasse 10, D-07745 Jena, Germany
M. Ose
Affiliation:
Institut für Physikalische Hochtechnologie, Winzerlaer Strasse 10, D-07745 Jena, Germany
H. P. Strunk
Affiliation:
Universität Erlangen-Nürnberg, Institut für Werkstoffwissenschaften-Mikrocharakterisierung, Cauerstr. 6, D-91058 Erlangen, Germany
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Abstract

We crystallize amorphous silicon (a-Si) layers (thicknesses: ∼300nm and ∼1300nm for comparison) that are deposited on glass substrates (Corning 7059) by low pressure chemical vapor deposition using a continuous wave Ar+-laser. We scan the raw beam with a diameter of ∼60νm in single traces and traces with varying overlap (30-60%). With optimized process parameters (fluence, scan velocity, overlap) we achieve polycrystalline Si with grains as wide as 100νm. The grain boundary population is dominated by first and second order twin boundaries as analyzed by electron backscattering analysis in the scanning electron microscope and convergent beam electron diffraction in the transmission electron microscope. These twins are known not (or only marginally) to degrade the electrical properties of the material. In addition to twins, dislocations and twin lamellae occur at varying densities (depending on grain orientation and process parameters). The recombination activity of the defects is analyzed by EBIC and according to these measurements crystallization receipts are defined that yield the reduction of electrically detrimental defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 621: Symposia Q/R – Electron-Emissive Materials, Vacuum Microelectronics… , 2000 , Q7.5.1
Copyright
Copyright © Materials Research Society 2000

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References

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