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THE DEFECT STRUCTURE OF ION-IMPLANTED AlxGa1−xAs/GaAs SUPERLATFICES

Published online by Cambridge University Press:  28 February 2011

B.C. DE COOMAN ,
C.B. CARTER ,
J. RALSTON ,
G.W. WICKS  and
L.F. EASTMAN
B.C. DE COOMAN
Affiliation:
Department of Materials Science and Engineering, Bard Hall
C.B. CARTER
Affiliation:
Department of Materials Science and Engineering, Bard Hall
J. RALSTON
Affiliation:
School of Electrical Engineering, Phillips Hall Cornell University, Ithaca NY 14853
G.W. WICKS
Affiliation:
School of Electrical Engineering, Phillips Hall Cornell University, Ithaca NY 14853
L.F. EASTMAN
Affiliation:
School of Electrical Engineering, Phillips Hall Cornell University, Ithaca NY 14853
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Abstract

Cross-sectional transmission electron microscopy (XTEM) has been used to study the defect structure and intermixing of ion-implanted and annealed AlxGa1−xAs/GaAs superlattices. The results show clearly that the layer intermixing depends on mass and energy of the implanted species and the annealing conditions. The temperature and duration of annealing determines mainly the amount of residual damage. In addition it was observed that in all cases the point-defects agglomeration was influenced by the strain field present at the layer interfaces; extended defects nucleate preferentially in the GaAs layers.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 333
Copyright
Copyright © Materials Research Society 1986

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