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Defects in Large-Misfit Heteroepitaxy

Published online by Cambridge University Press:  28 February 2011

D.J. Eaglesham ,
M. Aindow  and
R.C. Pond
D.J. Eaglesham
Affiliation:
Department of Materials Science and Engineering, University of Liverpool, Liverpool L69 3BX, UK
M. Aindow
Affiliation:
Department of Materials Science and Engineering, University of Liverpool, Liverpool L69 3BX, UK
R.C. Pond
Affiliation:
Department of Materials Science and Engineering, University of Liverpool, Liverpool L69 3BX, UK
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Abstract

A Transmission Electron Microscopy (TEM) study is presented of GaAs on Si (100) and CdTe on GaAs (100), and the implications for defect nucleation mechanisms are discussed. MOCVD GaAs/Si is shown to grow by island nucleation followed by 3D growth. Single islands are free of inversion domain boundaries (or “APBs”) implying that a single domain is able to grow over a demi-step on the substrate surface during this 3D growth. Misfit dislocations are shown to be edge type during island growth, with 60° type being generated at island junctions. The predominant threading dislocations are found to have inclined a/2 <110> Burgers vectors. The implied mechanisms for the generation of both misfit and threading dislocations are discussed. In MOCVD CdTe/GaAs the microstructure is shown to have a number of qualitatively similar features; in addition, study of this much larger misfit system allows us to deduce a possible explanation for misorientation effects in these systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 267
Copyright
Copyright © Materials Research Society 1988

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