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Defects in Quasi-One Dimensional Oxide Conductors: K0.3MoO3

Published online by Cambridge University Press:  15 February 2011

Kevin E. Smith
Affiliation:
Department of Physics, Boston University, Boston, MA 02215
Klaus Breuer
Affiliation:
Department of Physics, Boston University, Boston, MA 02215
David Goldberg
Affiliation:
Department of Physics, Boston University, Boston, MA 02215
Martha Greenblatt
Affiliation:
Department of Chemistry, Rutgers University, New Brunswick, NJ 08855
William McCarroll
Affiliation:
Department of Chemistry, Rutgers University, New Brunswick, NJ 08855
Steve L. Hulbert
Affiliation:
National Synchrotron Light Source, Brookhaven National Laboratory, Upton, NY 11973.
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Abstract

The electronic structure of the prototypical quasi-one dimensional (1D) conductor K03MoO3 has been studied using high resolution photoemission spectroscopy. In particular, the electronic structure of defects was investigated in order to understand the mechanism for charge density wave pinning and destruction of the Peierls transition. Defects were found to radically alter the electronic structure close to the Fermi level (EF), thus strongly modifying the structure of the Fermi surface. While a low emission intensity at EF has been interpreted as evidence for a Luttinger liquid ground state in a ID metal, we show that non-stoichiometric surfaces lead to similar effects. The nature of the ground state is discussed in the context of these results.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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