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Deposition and Electrical Characterization of Dielectric/Ferromagnetic Heterostructure

Published online by Cambridge University Press:  10 February 2011

T. Wu
Affiliation:
Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD20740-4111
S.B. Ogale
Affiliation:
Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD20740-4111
J.E. Garrison
Affiliation:
Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD20740-4111
B. Nagaraj
Affiliation:
Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD20740-4111
Z. Chen
Affiliation:
Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD20740-4111
R. Ramesh
Affiliation:
Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD20740-4111
T. Venkatesan
Affiliation:
Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD20740-4111
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Abstract

We grow Pb(Zr,Ti)O3 (001)/La1−xCaxMnO3 (001) hetereostructure epitaxially on Nb doped STO substrate using pulsed laser ablation. A field effect device configuration is formed with the manganite as the channel and the Nb:STO substrate as the gate. Channel resistance modulation by the gate pulsing is studied both with and without magnetic field. We not only find a remarkably large electroresistance effect of 76% at 4× 105V/ cm, but also the complimentarity of this ER effect with the widely studied CMR effect. The large size of this effect and the complimentarity of ER and MR effects strongly suggest a percolative phase separated picture of manganites.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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