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Determination of Diffusivities of Si Self-Diffusion and Si Self-Interstitials using Isotopically Enriched Single-or Multi-30Si Epitaxial Layers

Published online by Cambridge University Press:  01 February 2011

S. Matsumoto ,
S.R. Aid ,
T. Sakaguchi ,
K. Toyonaga ,
Y. Nakabayashi ,
M. Sakuraba ,
Y. Shimamune ,
Y. Hashiba ,
J. Murota  and
K. Wada
...Show all authors
S. Matsumoto
Affiliation:
Department of Electronics and Electrical Engineering, Keio University, Hiyoshi, Yokohama 223-8522, Japan
S.R. Aid
Affiliation:
Department of Electronics and Electrical Engineering, Keio University, Hiyoshi, Yokohama 223-8522, Japan
T. Sakaguchi
Affiliation:
Department of Electronics and Electrical Engineering, Keio University, Hiyoshi, Yokohama 223-8522, Japan
K. Toyonaga
Affiliation:
Department of Electronics and Electrical Engineering, Keio University, Hiyoshi, Yokohama 223-8522, Japan
Y. Nakabayashi
Affiliation:
Department of Electronics and Electrical Engineering, Keio University, Hiyoshi, Yokohama 223-8522, Japan
M. Sakuraba
Affiliation:
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
Y. Shimamune
Affiliation:
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
Y. Hashiba
Affiliation:
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
J. Murota
Affiliation:
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
K. Wada
Affiliation:
Department of Materials Science, University of Tokyo, Tokyo 113-8656, Japan
T. Abe
Affiliation:
Shin-Etsu Handoutai, Isobe, Gunma 379-01, Japan
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Abstract

Self-diffusivity of Si has been obtained over a wide temperature range (867°C-1300°C) using highly isotopically enriched 30Si epi-layers (99.88%) as a diffusion source into natural Si substrates. 30Si epi-layers were grown on both CZ-Si substrates and non-doped epi-layers grown on CZ-Si substrates using low pressure CVD with 30SiH4. Diffusion was performed in resistance-heated furnaces under a pure Ar atmosphere. After annealing, the concentrations of the respective Si isotopes were measured with secondary ion mass spectroscopy (SIMS). Diffusivity of 30Si (called Si self-diffusivity, DSD) was determined using a numerical fitting process with 30Si SIMS profiles. We found no major differences in self-diffusivity between bulk Si and epi-Si. Within the 867°C -1300°C range investigated, DSD can be described by an Arrhenius equation with one single activation enthalpy: DSD =14 exp (—4.37 eV/kT) cm2/s. The present result is in good agreement with that of Bracht et. al.

Diffusivity and thermal equilibrium concentration of Si self-interstitials have been determined using multi-30Si epi-layers consisting of alternative layers with isotopically pure 30Si and natural Si. The sample surface was oxidized and the Si self-interstitials were introduced from the surface. Spreading of 30Si spikes of each layer due to the diffusion of Si self-interstitials generated at the surface was measured with SIMS analysis. The diffusivity of Si self-interstitials, DI, is obtained by fitting with experimental results. In the temperature range between 820 -920°C, DI and thermal equilibrium concentration of Si self-interstitials, CIi, are described by the Arrhenius equations DI3.48×104 exp (—3.82eV/KT) cm2/s and CIi= 9.62×1018 exp (—0.475eV/KT) cm-3, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E8.4
Copyright
Copyright © Materials Research Society 2005

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