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Determination of Drift, Extended State Mobility and Recombination Lifetime in Compensated a-Si:H by Photomixing

Published online by Cambridge University Press:  01 January 1993

Yi Tang ,
R. Braunstein ,
Bolko Von Roedern  and
F.R. Shapiro
Yi Tang
Affiliation:
Department Physics, University of California, Los Angeles, CA 90024
R. Braunstein
Affiliation:
Department Physics, University of California, Los Angeles, CA 90024
Bolko Von Roedern
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401-3393
F.R. Shapiro
Affiliation:
Department of Electrical and Computer Engineering, Drexel University, Phila., PA 19104
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Abstract

Mobilities of a series of compensated a-Si:H samples, measured earlier by the time-of-flight technique [1], were determined by the technique of photomixing. We have found that both the extended state and the drift mobilities decrease as the compensation increases. Modelling these transport processes in the context of the photomixing technique, it is shown that long-range potential fluctuations can account for the decrease in the extended state mobility in compensated samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 407
Copyright
Copyright © Materials Research Society 1993

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References

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