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Development of fundamental components for amplification of magneto-surface-acoustic-waves in highly magnetostrictive metal films by means of electron bunching

Published online by Cambridge University Press:  01 February 2011

Takeshi Kawahata
Affiliation:
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1–1 Hibari-Ga-Oka, Tempaku, Toyohashi, Aichi, Japan
Naohisa Obata
Affiliation:
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1–1 Hibari-Ga-Oka, Tempaku, Toyohashi, Aichi, Japan
Kazuhiro Nishimura
Affiliation:
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1–1 Hibari-Ga-Oka, Tempaku, Toyohashi, Aichi, Japan
Hironaga Uchida
Affiliation:
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1–1 Hibari-Ga-Oka, Tempaku, Toyohashi, Aichi, Japan
Mitsuteru Inoue
Affiliation:
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1–1 Hibari-Ga-Oka, Tempaku, Toyohashi, Aichi, Japan
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Abstract

In a magneto-surface-acoustic-wave (MSAW) device, phase velocity is controlled by an external magnetic field. We proposed amplification of MSAW with a hybrid structure of FeB amorphous film / InSb semiconductor thin film / LiNbO3 substrate, which is expected to compensate the attenuation of MSAW caused by eddy current loss. In the fabricated MSAW device having the FeB amorphous film with low coercivity and high magnetostrictive, the phase retardation of about 600 degree/cm at magnetic fields of ±300 Oe was obtained. The InSb thin film with a mobility of about 3.5×103 cm2/Vs was obtained by using annealing process. The results show possibility of the MSAW amplification.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

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