Hostname: page-component-848d4c4894-hfldf Total loading time: 0 Render date: 2024-05-20T05:25:19.695Z Has data issue: false hasContentIssue false

Dielectric Behavior and Phonon Damping in Low-Dielectric Constant Perovskite Materials

Published online by Cambridge University Press:  10 February 2011

Ram S. Katiyar
Affiliation:
University of Puerto Rico, Dept of Physics, San Juan, PR 00931
Igor Siny
Affiliation:
University of Puerto Rico, Dept of Physics, San Juan, PR 00931
R. Guo
Affiliation:
Penn State Univ, Material Research Lab, University Park, PA 16802
A. S. Bhalla
Affiliation:
Penn State Univ, Material Research Lab, University Park, PA 16802
Get access

Abstract

We have carried out a comparative study of the dielectric losses in some complex perovskites with both 1:1 and 1:2 compositions of the B ions, namely, SrAl1/2Nb1/2O3 (SAN), SrAl1/2Ta1/2O3 (SAT) and BaMg1/3Ta2/3O3 (BMT). The samples were prepared in two forms, viz. ceramics and single-crystal fibers, the latter were grown by laser heated pedestal growth technique (LHPG). All of these materials possess low dielectric constants, low losses and high Q values. In contrast to relaxor ferroelectrics, that as a rule exhibit broad features in their Raman spectra, SAN, SAT and especially BMT have very narrow phonon lines in the Raman spectra. A linear correlation is found between the microwave dielectric losses and the width of first order phonon lines in a sequence of BMT → SAT → SAN ceramics with increasing phonon damping. Moreover, the phonon damping decreases in materials with non-close-packed structure where there is enough space for undisturbed phonon vibrations. The problem of charge compensation in compounds with the Bsite disorder is also discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Guo, R. Bhalla, A.S. Sheen, J. Ainger, F.W. Erdei, S. Subbarao, E.C. and Cross, L.E. J. Mat. Res. 10, 1(1995).Google Scholar
2. Ruyan Guo, Bhalla, A.S. and Cross, L.E. J. Appl.Phys. 75, 4704 (1994).Google Scholar
3. Galasso, F.S. Structure, Properties and Preparation of Perovskite Type Compounds (Pergamon Press, London, U.K., 1969).Google Scholar
4. Lines, M.E. and Glass, A.M. Principles and Applications of Ferroelectrics and Related Materials (Clarendon, Oxford, 1977).Google Scholar
5. Setter, N. and Laulicht, I. Appl. Spectrosc. 41, 526 (1987).Google Scholar
6. Siny, I.G. and Smimova, T.A. Fiz. Tverd. Tela 30, 823 (1989); Ferroelectrics 90, 191 (1989).Google Scholar
7. Bismayer, U. Devarajan, V. and Groves, P. J. Phys.: Condens. Matter 1, 6977 (1989).Google Scholar
8. Gregora, I. Petzelt, J. Pokomy, J. Vorlicek, V. Zikimund, Z. Zurmuhlen, R. and Setter, N. Solid State Comm. 94, 899 (1995).Google Scholar
9. Reaney, I.M. Petzelt, J. Voitsekhovskii, V.V. Chu, F. and Setter, N. J. Appl. Phys. 76, 2086 (1994).Google Scholar
10. Tao, R. Guo, A.R. Tu, C.-S. Siny, I. Katiyar, R.S. Guo, R. and Bhalla, A.S. Ferroelectrics Letters, 21, 79 (1996).Google Scholar
11. Idink, H. and White, W.B. J. Appl. Phys. 76, 1789 (1994).Google Scholar
12. Sagala, D.A. and Koyasu, S. J. Am. Ceram. Soc. 76, 2433 (1993).Google Scholar
13. Tao, R. Siny, I. Katiyar, R.S. Guo, R. and Bhalla, A.S. J. Raman Spectroscopy 27, 873 (1996).Google Scholar
14. Boulesteix, C. Caranoni, C. Kang, C.Z. Sapozhnikova, L.S. Siny, I.G. and Smirnova, T.A. Ferroelectrics 107, 241 (1990).Google Scholar