Hostname: page-component-848d4c4894-75dct Total loading time: 0 Render date: 2024-04-30T10:55:44.828Z Has data issue: false hasContentIssue false
  • English
  • Français

Discharge Annealing of Ion Implanted Silicon

Published online by Cambridge University Press:  15 February 2011

C. B. Fleddermann ,
N. J. Ianno ,
J. T. Verdeyen  and
B. G. Streetman
C. B. Fleddermann
Affiliation:
Department of Electrical Engineering and Coordinated Science Laboratory University of Illinois at Urbana-Champaign, Urbana, IL 61801
N. J. Ianno
Affiliation:
Department of Electrical Engineering and Coordinated Science Laboratory University of Illinois at Urbana-Champaign, Urbana, IL 61801
J. T. Verdeyen
Affiliation:
Department of Electrical Engineering and Coordinated Science Laboratory University of Illinois at Urbana-Champaign, Urbana, IL 61801
B. G. Streetman
Affiliation:
Department of Electrical Engineering and Coordinated Science Laboratory University of Illinois at Urbana-Champaign, Urbana, IL 61801
Get access

Abstract

A gas discharge system is used to produce a large area electron beam which can be used to angeal ion-implanted semiconductors. The sample temperature rise and amorphousto-single-crystal regrowth were monitored using the change in optical reflectivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 795
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Auston, D. H., Golovchenko, J. A., Smith, P. R., Surko, C. M. and Venkatesan, T. N. C., Appl. Phys. Lett., 33(6), 539, 1978.Google Scholar
2. Greenwalk, A. C., Kirkpatrick, A. R., Little, R. G. and Minnucci, J. A., J. Appl. Phys. 50(2), 783, 1979.Google Scholar
3. lanno, N., Verdeyen, J. T., Chan, S. S., Streetman, B. G., Appl. Phys. Lett. 39(8), 622, 1981.Google Scholar
4. Cobine, J. D., Gaseous Conductors, (Dover Publications Inc. 1958), p. 217–218.Google Scholar
5. Berger, M. J. and Seltzer, S. M.. “Tables of Energy Losses and Ranges of Electrons and Positrons.” N65–12506. U.S. Department of Commerce, NBS: Institute for Appl. Technology.Google Scholar
6. Cardona, M., Paul, W. and Brooks, H.: In Solid State Phys. in Electronics and Telecommunications, Proc. Int. Conf. Brussels 1958. (Academic Press, 1960). V. 1, pt. 1, p. 206–214.Google Scholar
7. Lampert, M. O., Koebel, J. M. and Siffert, P., J. Appl. Phys. 52(8), 4975, 1981.Google Scholar
8. Moss, T. S., Optical Properties of Semiconductors (Butterworth's Scientific Publications, London, 1959) p. 48.Google Scholar
9. Sze, S. M., Physics of Semiconductor Devices (Wiley - Interscience, New York, 1969) p. 24.Google Scholar
10. Hulthén, R., Physics Scripta, 12(6), 342, 1975.CrossRefGoogle Scholar
11. Olson, G. L., Kokorowski, S. A., McFarlane, R. A. and Hess, L. D., Appl. Phys. Lett. 37(11), 1019, 1980.Google Scholar
12. Roth, J. A., Olson, G. L., Kokorowski, S. A. and Hess, L. D.: In Proceedings of the Laser and Electron-Beam Solid Interactions and Materials Processing Conference, ed. Gibbons, J. F., Hess, L. D. and Sigmon, T. W., (Elsevier North Holland, 1981), pp. 413–426.Google Scholar