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Dislocation Content of Etch Pits in Hexagonal Silicon Carbide

Published online by Cambridge University Press:  21 March 2011

Igor I. Khlebnikov ,
Mohsen B. Lari ,
Yuri I. Khlebnikov ,
Robert T. Bondokov ,
Ramakrishna Ayyagari ,
Peter Muzykov ,
Tangali S. Sudarshan ,
T. Anderson  and
J. B. Whitlock
Igor I. Khlebnikov
Affiliation:
University of South Carolina, College of Engineering and Information Technology, Columbia, SC 29208, U.S.A.
Mohsen B. Lari
Affiliation:
University of South Carolina, College of Engineering and Information Technology, Columbia, SC 29208, U.S.A.
Yuri I. Khlebnikov
Affiliation:
University of South Carolina, College of Engineering and Information Technology, Columbia, SC 29208, U.S.A.
Robert T. Bondokov
Affiliation:
University of South Carolina, College of Engineering and Information Technology, Columbia, SC 29208, U.S.A.
Ramakrishna Ayyagari
Affiliation:
University of South Carolina, College of Engineering and Information Technology, Columbia, SC 29208, U.S.A.
Peter Muzykov
Affiliation:
University of South Carolina, College of Engineering and Information Technology, Columbia, SC 29208, U.S.A.
Tangali S. Sudarshan
Affiliation:
University of South Carolina, College of Engineering and Information Technology, Columbia, SC 29208, U.S.A.
T. Anderson
Affiliation:
Litton Airtron, Morris Plaines, NJ 07950, U.S.A.
J. B. Whitlock
Affiliation:
Litton Airtron, Morris Plaines, NJ 07950, U.S.A.
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Abstract

6H- and 4H- SiC crystals grown on the Si-face were chemically etched on the as-grown (virgin) surface and the C-face (sliced side). The etching of both the surfaces revealed a strong relationship between a variety of etch pits and the morphological features of the grown boule surface. Several types of etched patterns were revealed. On the Si face, we observed small, medium, and large hexagonal shaped pits and a linear array of small etch pits. However, the C face contained only small pits and a linear array of small pits.

We observed individual or group of dislocations that were connected from the Si face to the opposite C face of the wafer. Also, etch pit lines oriented along specific crystallographic directions were seen.

Our experimental observations have provided a physical basis to explain the generation of defects in SiC. An analysis of our observations show that a correlation exists between the distribution of different size etch pits and the condition of the crystal growth process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H5.4
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

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