Hostname: page-component-848d4c4894-mwx4w Total loading time: 0 Render date: 2024-06-16T12:29:23.401Z Has data issue: false hasContentIssue false
  • English
  • Français

Background Impurity Reduction and Iron Doping of Gallium Nitride Wafers

Published online by Cambridge University Press:  11 February 2011

Robert P. Vaudo ,
Xueping Xu ,
Allan D. Salant ,
Joseph A. Malcarne ,
Edward L. Hutchins  and
George R. Brandes
Robert P. Vaudo
Affiliation:
ATMI, Inc., Danbury, CT 06810, U.S.A.
Xueping Xu
Affiliation:
ATMI, Inc., Danbury, CT 06810, U.S.A.
Allan D. Salant
Affiliation:
ATMI, Inc., Danbury, CT 06810, U.S.A.
Joseph A. Malcarne
Affiliation:
ATMI, Inc., Danbury, CT 06810, U.S.A.
Edward L. Hutchins
Affiliation:
ATMI, Inc., Danbury, CT 06810, U.S.A.
George R. Brandes
Affiliation:
ATMI, Inc., Danbury, CT 06810, U.S.A.
Get access

Abstract

Background impurities and the resulting electrical characteristics were studied for GaN wafers grown using hydride vapor phase epitaxy at various growth conditions. The electron concentration was found to decrease with increasing GaN thickness, by orders of magnitude in the first few microns of growth, but continuing gradually for thousands of microns. Physical removal of the backside degenerate layer enabled improved analysis of the electrical properties. Secondary ion mass spectroscopy was used to determine that the presence of oxygen and silicon accounted for the electron concentration for unintentionally n-type doped material. The concentration of oxygen was found to vary more than that of silicon and increased with decreasing growth temperature. The resistivity was measured to be as high as 1 ohm-cm, corresponding to a carrier concentration of 1016 cm−3. Iron was demonstrated to effectively compensate the residual donors and increased the resistivity to greater than 109 ohm-cm at room temperature and greater than 3×105 ohm-cm at 250 °C. An activation energy for the iron-doped GaN was determined by variable temperature resistivity measurements to be 0.51 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L3.37
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Xu, X., Vaudo, R. P., Brandes, G. R. and Flynn, J. S., J. Electron. Mater. 31, 402 (2002).Google Scholar
2. Usui, A., Sunakawa, H., Sakai, A., and Yamaguchi, A. A., Jpn. J. Appl. Phys. 36, L899 (1997).Google Scholar
3. Maruska, H. P. and Tietjen, J. J., Appl. Phys. Lett. 15, 327 (1969).Google Scholar
4. Nickl, J. J., Just, W., and Bertinger, R., Mat. Res. Bull. 9, 1413 (1974).Google Scholar
5. Look, D. C. and Sizelove, J. R., Appl. Phys. Lett. 79, 1133 (2001).Google Scholar
6. Vaudo, R. P., Brandes, G. R., Flynn, J. S., Xu, X., Chriss, M. F., Christos, C. S., Keogh, D. M., and Tamweber, F. D., Proc. Int. Workshop on Nitride Semiconductors, IPAP Conf. Series 1, 15 (2000).Google Scholar
7. Gotz, W., Walker, J., Romano, L. T., Johnson, N. M., and Molnar, R. J., Mat. Res. Soc. Symp. Proc. 449, 525 (1997).Google Scholar
8. Motoki, K., Okahisa, T., Matsumoto, N., Matsushima, M., Kimura, H., Kasai, H., Takemoto, K., Uematsu, K., Hirano, T., Nakayama, M., Nakahata, S., Ueno, M., Hara, D., Kumagai, Y., Koukitu, A., and Seki, H., Jpn. J. Appl. Phys. 40, L140 (2001).Google Scholar
9. Kuznetsov, N. I., Nikolaev, A. E., Zubrilov, A. S., Melnik, Y. V., and Dimitriev, V. A., Appl. Phys. Lett. 75, 3138 (1999).Google Scholar
10. Golan, Y., Wu, X. H., Speck, J. S., Vaudo, R. P. and Phanse, V. M., Appl. Phys. Lett. 743, 1498 (1999).Google Scholar