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Nitrogen: Not a Dopant in Crystalline Si (C-Si), But an N-Type Dopant in A-Si:H, Why?

Published online by Cambridge University Press:  16 February 2011

G. Lucovsky ,
M.J. Williams ,
S.S. He ,
S.M. Cho ,
Z. Jing  and
J.L. Whitten
G. Lucovsky
Affiliation:
Departments of Physics, Materials Science and Engineering, Electrical and Computer Engineering, and Chemistry, North Carolina State University, Raleigh, NC 27695–8202, USA
M.J. Williams
Affiliation:
Departments of Physics, Materials Science and Engineering, Electrical and Computer Engineering, and Chemistry, North Carolina State University, Raleigh, NC 27695–8202, USA
S.S. He
Affiliation:
Departments of Physics, Materials Science and Engineering, Electrical and Computer Engineering, and Chemistry, North Carolina State University, Raleigh, NC 27695–8202, USA
S.M. Cho
Affiliation:
Departments of Physics, Materials Science and Engineering, Electrical and Computer Engineering, and Chemistry, North Carolina State University, Raleigh, NC 27695–8202, USA
Z. Jing
Affiliation:
Departments of Physics, Materials Science and Engineering, Electrical and Computer Engineering, and Chemistry, North Carolina State University, Raleigh, NC 27695–8202, USA
J.L. Whitten
Affiliation:
Departments of Physics, Materials Science and Engineering, Electrical and Computer Engineering, and Chemistry, North Carolina State University, Raleigh, NC 27695–8202, USA
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Abstract

We have incorporated N-atoms into hydrogenated amorphous silicon in the Si-rich alloy regime to ∼12 at.% N, and have observed a transition from n-type doping to alloying as the concentration of N-atoms is increased above about 5 at.%. By analogy with the local bonding arrangements of P-donors in n-doped a-Si:H, we attribute the doping to four-fold coordinated N-atoms with second neighbor H-atoms as in N+-Si-H linkages. The occurrence of these arrangements is supported by (i) IR studies which indicate a non-statistical association of N and H-atoms bonded to the same Si-atom, and (ii) a chemical bonding model in which the large effective electronegativies of four-fold coordinated N+ atoms and neutral O-atoms promote similar bonding properties with respect to their nearest-neighbor arrangements with Si and H atoms such as N+ (O) -Si-H linkages

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 637
Copyright
Copyright © Materials Research Society 1994

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References

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