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Donor Neutralization by Fluorine Containing Plasmas in Si -Doped N -Type GaAs Crystals

Published online by Cambridge University Press:  10 February 2011

J. Wada ,
Y. Matsukura ,
T. Ogihara ,
Y. Furukawa  and
H. Tanaka
J. Wada
Affiliation:
FUJITSU LABORATORIES Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
Y. Matsukura
Affiliation:
FUJITSU LABORATORIES Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
T. Ogihara
Affiliation:
FUJITSU QUANTUM DEVICES Ltd., Syowa-cho, Nakakoma-gun, Yamanashi 409-38, Japan
Y. Furukawa
Affiliation:
FUJITSU QUANTUM DEVICES Ltd., Syowa-cho, Nakakoma-gun, Yamanashi 409-38, Japan
H. Tanaka
Affiliation:
FUJITSU LABORATORIES Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
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Abstract

CF4, SF6 and CF 4/O2 plasma-induced damage in silicon-doped n-type GaAs crystals have been investigated by using Hall measurements, and SIMS analysis. We observed that the carrier density degraded with post annealing after plasma exposure. The degree of deactivation of carrier density with post annealing was strongly dependent on the plasma chemistries and the self-bias Vdc of the plasmas. From SIMS analysis, fluorine contamination was observed in the surface region of GaAs crystals after CF4 plasma exposure. The internal diffusion of fluorine atoms and the localization of fluorine atoms in n-type GaAs layers were observed after post annealing at 400°C. From these results, we proposed a mechanism of plasma induced damage in which internally diffused fluorine atoms neutralize the donor silicon by forminq a Si-F bond. We determined the effective diffusion coefficient of fluorine in GaAs as 1.5 × 10−11 cm2/s (at 400°C).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 525
Copyright
Copyright © Materials Research Society 1998

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References

1. Pang, S. W., Lincoln, G. A., McCell, R. W., DeGraff, P. D., Geis, M. W. and Piacentiti, W.J., J. Vac. Sci. Technol. BI, 1334 (1983),Google Scholar
2. Mitani, K., Oda, H. and Imamura, Y., Appl. Phys. Lett. 65, 1165 (1994).Google Scholar
3. Mitani, K., Oda, H.. Kasai, J. and Imamura, Y., Jap. J. Appl. Phys. 34, 3970 (1995).Google Scholar
4. Pearton, S. J., Abemathy, C. A. and Lee, J. W., J. Vac. Sci. Technol. B 13, 15 (1995).Google Scholar
5. Hayafuji, N., Yamamoto, Y., Yoshida, N., Sonoda, T., Takamiya, S. and Mitsui, S., Appl. Phys. Let. 66, 863 (1995).Google Scholar
6. Wada, J., Matsukura, Y., Ogihara, T. and Ueda, O., J. Appl. Phys. 82. 617 (1997).Google Scholar
7. Gogolides, E., Nicolai, J. P. and Sawin, H. H.. I. Vac. Sci. Technol. A 7, 1001 (1989).Google Scholar
8. Chevallier, J., Dautremont-Smith, W. C., Tu, C. W. and Pearton, S. J.. Appl. Phys. Lett. 47. 108 (1985).Google Scholar
9. Chevallier, J., Cleijand, B. and Pajot, B., Semiconductor and Semimetals Vol. 34, Academic Press, New York, 1991, pp 447–510.Google Scholar