Hostname: page-component-848d4c4894-p2v8j Total loading time: 0.001 Render date: 2024-05-29T03:40:06.078Z Has data issue: false hasContentIssue false
  • English
  • Français

Dopant Dependent Extended Defect Nucleation and Growth Kinetics in Silicon During 1 Mev Electron Irradiation

Published online by Cambridge University Press:  26 February 2011

Albert Romano-Rodriguez  and
Jan Vanhellemont
Albert Romano-Rodriguez
Affiliation:
LCMM, Departament de Física Aplicada i Electrónica, Universität de Barcelona, Diagonal 647, E-08028 Barcelona, Spain
Jan Vanhellemont
Affiliation:
Interuniversity Micro-Electronics Centre (IMEC), Kapeldreef 75, B-3001 Leuven, Belgium
Get access

Abstract

In this paper results of a study of electron irradiation induced extended defect generation in doped silicon is presented. The irradiations are performed in-situ with 1 MeV electrons in a high voltage transmission electron microscope. Preferential generation of extended defects is observed in certain areas of the sample which can be correlated with well defined dopant concentration levels. The defect growth kinetics is studied as a function of the irradiation temperature and dose and the type and concentration of dopant.

After the first irradiation experiment some of the samples received a second electron irradiation, during which shrinkage and even complete annihilation of the previously generated defects can be observed. The observed results are interpreted on the base of point defect reactions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 1091
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Salisbury, I. G. and Loretto, M. H., Phil. Mag. 34, 1057 (1979).Google Scholar
2. Asahi, H., Oshima, R. and Fujita, F. E., Inst. Phys. Conf. Ser. 59, 454 (1980).Google Scholar
3. Aseev, A. L., Fedina, L. I., Hoehl, D. and Bartsch, H., Sol. Stat. Phenomena Vols. 6&7, 235 (1989).Google Scholar
4. Brown, L. M. and Fathy, D., Phil. Mag. B 43, 715 (1981).Google Scholar
5. Romano, A., Vanhellemont, J., Morante, J. R. and Vandervorst, W., Micron and Microscopica Acta 20, 151 (1990).CrossRefGoogle Scholar
6. Romano-Rodríguez, A., Vanhellemont, J., in Defects in Semiconductors 16 (ICDS 16), edited by Davies, G., DeLeo, G. G. and Stavola, M. (Trans Tech Publications, Switzerland, 1992), 303.Google Scholar
7. Romano-Rodriguez, A., Vanhellemont, J., De Keersgieter, A., Vandervorst, W. and Morante, J. R., in Gettering and Defect Engineering in Semiconductor Technology (GADEST '91), edited by Kittler, M. and Richter, H. (Trans Tech Publications, Switzerland, 1991), 449.Google Scholar
8. Romano, A., Vanhellemont, J., Bender, H. and Morante, J. R., Ultramicroscopy 31, 183 (1989).Google Scholar
9. Hua, G. -C., Oshima, R. and Fujita, F.E., in Defect Control in Semiconductors, edited by Sumino, K. (Elsevier Science Publishers, New York, 1990), p. 535.Google Scholar
10. Kimerling, L. C., Asom, M. T., Benton, J. L., Drevinsky, P. J. and Caefer, C. E., Mater. Sci. Forum 38–41, 141 (1989).Google Scholar
11. Hasebe, M., Oshima, R. and Fujita, F. E., Jap. J. Appl. Phys. 25, 159 (1986).Google Scholar