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Dopant Loss Origins of Low Energy Implanted Arsenic and Antimony for Ultra Shallow Junction Formation

Published online by Cambridge University Press:  10 February 2011

Kentaro Shibahara ,
Hiroaki Furumoto ,
Kazuhiko Egusa ,
Meishoku Koh  and
Shin Yokoyama
Kentaro Shibahara
Affiliation:
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-hiroshima, 739-8527, Japan, shiba@sxsys.hiroshima-u.ac.jp
Hiroaki Furumoto
Affiliation:
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-hiroshima, 739-8527, Japan, shiba@sxsys.hiroshima-u.ac.jp
Kazuhiko Egusa
Affiliation:
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-hiroshima, 739-8527, Japan, shiba@sxsys.hiroshima-u.ac.jp
Meishoku Koh
Affiliation:
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-hiroshima, 739-8527, Japan, shiba@sxsys.hiroshima-u.ac.jp The Japan Science and Technology Corporation, Higashi-hiroshima, Japan
Shin Yokoyama
Affiliation:
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-hiroshima, 739-8527, Japan, shiba@sxsys.hiroshima-u.ac.jp
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Abstract

We have investigated the origins of sheet resistance increase in ultra shallow junctions formed by low energy As or Sb implantation. The increase is mainly attributed to dopant loss during annealing due to pileup of dopant at Si02/Si interface. This problem is common to As and Sb and will become more significant as the implantation energies are decreased. We found that the pileup can be classified into two stages from the time dependence of Sb SIMS depth profile .In the early stage of annealing the pileup is very fast and is probably related to the transport of the dopants due to solid phase epitaxial growth of an amorphized layer formed by the implantation. In the later stage the pileup is much slower and is considered to be governed by dopant diffusion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 532: Symposium EE – Silicon Front-End Technology - Materials Processing & Modeling , 1998 , 23
Copyright
Copyright © Materials Research Society 1998

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References

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