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Doping Influence on TiSi2 C49-C54 Phase Conversion Kinetics by Micro-Raman Spectroscopy

Published online by Cambridge University Press:  10 February 2011

F. Meinardi ,
S. Quilici ,
L. Moro ,
G. Queirolo  and
A. Sabbadini
F. Meinardi
Affiliation:
INFM- Dipartimento di Scienza dei Materiali, Via Emanueli 15,1-20126 Milano Italy
S. Quilici
Affiliation:
INFM- Dipartimento di Scienza dei Materiali, Via Emanueli 15,1-20126 Milano Italy
L. Moro
Affiliation:
INFM-Laboratorio MDM, via Olivetti 2, 1-20041 Agrate B.za (Mi) Italy
G. Queirolo
Affiliation:
SGS-Thomson Microelectronics, via Olivetti 2, 1-20041 Agrate B.za (Mi) Italy
A. Sabbadini
Affiliation:
SGS-Thomson Microelectronics, via Olivetti 2, 1-20041 Agrate B.za (Mi) Italy
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Abstract

MicroRaman measurements on titanium silicide films grown on single-crystal and polycrystalline silicon substrates doped with As, BF2 and P have been performed. The data collected on patterns of different areas and shapes, but comparable doping level show that the doping has negligible effects both on C54 nucleation center density and on activation energy for the C49/C54 phase transition. On the contrary, substrate strongly affects the C54 growth rate, ruling the ability of the C54 phase to propagate after the nucleation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 514: Symposium I – Advanced Interconnects & Contact Materials & Processes for… , 1998 , 387
Copyright
Copyright © Materials Research Society 1998

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References

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