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Doping of GaAs From Silane Decomposition Under Pulsed Laser Irradiation

Published online by Cambridge University Press:  21 February 2011

D. Pribat ,
D. Dieumegard ,
B. Dessertenne  and
J. Chaplart
D. Pribat
Affiliation:
Thomson-CSF/LCR, Domaine de Corbeville, B.P. 10, 91401 Orsay Cedex, France
D. Dieumegard
Affiliation:
Thomson-CSF/LCR, Domaine de Corbeville, B.P. 10, 91401 Orsay Cedex, France
B. Dessertenne
Affiliation:
Thomson-CSF/LCR, Domaine de Corbeville, B.P. 10, 91401 Orsay Cedex, France
J. Chaplart
Affiliation:
Thomson-CSF/LCR, Domaine de Corbeville, B.P. 10, 91401 Orsay Cedex, France
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Abstract

We have studied silicon incorporation in GaAs subsequent to Nd-YAG laser irradiation through high pressure silane atmospheres. The process involves SiH4 pyrolysis at contact with a laser-melted GaAs surface, and incorporation of the released Si atoms in the melt. SIMS analyses have allowed us to study silicon incorporation as a function of SiH4 pressure, laser energy density and number of laser shots. The high sheet resistance of the doped layers indicates that the silicon atoms are poorly electrically activated. A compensation mechanism is discussed based on oxygen penetration from native GaAs oxide layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 29: Symposium I – Laser-Controlled Chemical Processing of Surfaces , 1983 , 367
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

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