Hostname: page-component-76fb5796d-skm99 Total loading time: 0 Render date: 2024-04-28T13:14:41.763Z Has data issue: false hasContentIssue false
  • English
  • Français

Dynamics of Microstructure in the Early Stages of Ion Beam Assisted Film Growth

Published online by Cambridge University Press:  21 February 2011

Harry A. Atwater ,
C. J. Tsai ,
S. Nikzad  and
M.V.R. Murty
Harry A. Atwater
Affiliation:
Thomas J. Watson Laboratory of Applied Physics California, Institute of Technology, Pasadena, CA 91125
C. J. Tsai
Affiliation:
Thomas J. Watson Laboratory of Applied Physics California, Institute of Technology, Pasadena, CA 91125
S. Nikzad
Affiliation:
Thomas J. Watson Laboratory of Applied Physics California, Institute of Technology, Pasadena, CA 91125
M.V.R. Murty
Affiliation:
Thomas J. Watson Laboratory of Applied Physics California, Institute of Technology, Pasadena, CA 91125
Get access

Abstract

Recent progress in low energy ion-surface interactions, and the early stages of ion-assisted epitaxy of semiconductor thin films is described. Advances in three areas are discussed: dynamics of displacements and defect incorporation, nucleation mechanisms, and the use of ion bombardment to modify epitaxial growth kinetics in a truly surface-selective manner.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 479
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Bean, J.C., Becker, G.E., PetrofF, P.M., and Seidel, T.E., J. Appl. Phys., 48, 907 (1977).Google Scholar
[2] Yu, M.L., Appl. Phys. Lett., 40, 986 (1982).Google Scholar
[3] Garverick, L.M., Comfort, J.H., Uyeh, T.R., Reif, R., Baiocchi, F.A. and Luftman, H.S., J. Appl. Phys., 62, 3398 (1987).CrossRefGoogle Scholar
[4] Comfort, J.H., Garverick, L.M., and Reif, R., J. Appl. Phys., 62, 3388 (1987).CrossRefGoogle Scholar
[5] Al-Bayati, A.H., Ormann-Rossiter, K.G., Badheka, R., and Armour, D.G., Surf. Sci., 237, 213 (1990).Google Scholar
[6] Yagi, K., Tamura, S. and Tokuyama, T., Jpn. J. Appl. Phys., 16, 245 (1977).CrossRefGoogle Scholar
[7] Tokuyama, T., Yagi, K., Miyake, K., Tamura, M., Natsuaki, N., and Tachi, S., Nucl. Instr. and Meth., 182/183, 241 (1981).Google Scholar
[8] Zalm, P.C. and Beckers, L.J., Appl. Phys. Lett., 41, 167 (1982).Google Scholar
[9] Herbots, N., Appleton, B.R., Noggle, T.S., Zuhr, R.A., and Pennycook, S.J., Nucl. Instr. and Meth., B13, 250 (1986).Google Scholar
[10] Orrman-Rossiter, K.G., Mitchell, D.R.G., Donelly, S.E., Rossouw, C.J., Glanvill, S.R., Miller, P.R., Al-Bayati, A.H., van der Berg, J.A., and Armour, D.G., Phil. Mag. Lett., 61, 311 (1990).CrossRefGoogle Scholar
[11] Haynes, T.E., Zuhr, R.A., Pennycook, S.J., Larson, B.C., and Appleton, B.R., J. Vac. Sci. Technol, A7, 1372 (1989).Google Scholar
[12] Shimizu, S., Tsukakoshi, O., Komiya, S., and Makita, Y., J. Vac. Sci. Technol., B3, 1130 (1985).Google Scholar
[13] Shimizu, S., Tsukakoshi, O., Komiya, S., and Makita, Y., Jpn. J. Appl. Phys., 24, L115 (1985).Google Scholar
[14] Shimizu, S., Tsukakoshi, O., Komiya, S., and Makita, Y., Jpn. J. Appl. Phys., 24, 1130 (1985).CrossRefGoogle Scholar
[15] Haynes, T.E., Zuhr, R.A., Pennycook, S.J., and Appleton, B.R., Appl. Phys. Lett., 54, 1439 (1989).Google Scholar
[16] Ohrni, T., Ichikawa, T., Iwabuchi, H., and Shibata, T., J. Appl. Phys., 66, 4756 (1989).Google Scholar
[17] Tsai, C.J., Atwater, H.A. and Vreeland, T., Appl. Phys. Lett., 57, 2305 (1990).Google Scholar
[18] Barnett, S.A., Choi, C.H. and Kaspi, R., Mat. Res. Soc. Symp. Proc, 201, 43(1991).Google Scholar
[19] Narusawa, T., Shimizu, S., and Komiya, S., J. Vac. Sci. Technol., 16, 366 (1979).Google Scholar
[20] Wehner, G.K., Warner, R.M., Wang, P.D., and Kim, Y.H., J. Appl. Phys., 64, 6754 (1988).Google Scholar
[21] Murty, M.V.R. and Atwater, H.A., unpublished.Google Scholar
[22] Cadien, K.C., Eltoukhy, A.H., and Greene, J.E., Appl. Phys. Lett. 38, 773 (1981).Google Scholar
[23] Greene, J.E., J. Vac. Sci. Technol., A4, 1947 (1987).Google Scholar
[24] Romano, L.T., Robertson, I.M., Greene, J.E., and Sundgren, J-E., Phys. Rev., B36, 7523 (1987).Google Scholar
[25] Kaspi, R. and Barnett, S.A., J. Appl. Phys., to be published.Google Scholar
[26] Tsai, C.J., Rozenak, P., Atwater, H.A. and Vreeland, T., J. Cryst. Growth, B36, 7523 (1991).Google Scholar
[27] Tsai, C.J., Atwater, H.A., and Vreeland, T., Mat. Res. Soc. Symp. Proc, 201 57 (1991).Google Scholar
[28] Brailsford, A.D. and Bullough, R., J. Nucl. Mater., 103–104, 1379 (1972).Google Scholar
[29] Greene, J.E., Crit. Rev. Solid State Mater. Sci., 11, 47 (1983).CrossRefGoogle Scholar
[30] Brice, D.K., Tsao, J.Y. and Picraux, S.T., Nucl. Instr. and Meth., B44, 68 (1989).Google Scholar
[31] Hasan, M-A., Knall, J., Barnett, S.A., Rockett, A., Sundgren, J-E., and Greene, J.E., J. Vac. Sci. Technol., A5, 1883 (1987).Google Scholar
[32] Nikzad, S. and Atwater, H.A., Mat. Res. Soc. Symp. Proc. 223, 53 (1991).Google Scholar
[33] Tsao, J.Y., Chason, E., Horn, K.M., Brice, D.K., and Picraux, S.T., Nucl. Instr. and Meth., B39, 72 (1989).Google Scholar
[34] Chason, E., Tsao, J.Y., Horn, K.M. and Picraux, S.T., J. Vac. Sci. Technol., 332, 332 (1989).Google Scholar
[35] Chason, E., Tsao, J.Y., Horn, K.M., Picraux, S.T., and Atwater, H.A., J. Vac. Sci. Technol., A8, 2507 (1990).Google Scholar
[36] Chason, E., Bedrossian, P., Horn, K.M., Tsao, J.Y., and Picraux, S.T., Appl. Phys. Lett., 57, 1793 (1990).CrossRefGoogle Scholar
[37] Bedrossian, P., Houston, J.E., Tsao, J.Y., Chason, E., and Picraux, S.T., Phys. Rev. Lett., 67 124 (1991).Google Scholar
[38] Bedrossian, P. and Klitsner, T., Phys. Rev B., in press.Google Scholar
[39] Tsai, C.J. and Atwater, H.A., unpublished.Google Scholar
[40] Choi, C-H, Ai, R., and Barnett, S.A., Phys. Rev. Lett., 67, 2826 (1991).Google Scholar
[41] Choi, C-H and Barnett, S.A., Appl. Phys. Lett., 55, 2319 (1989).Google Scholar
[42] Choi, C-H, Hultman, L. and Barnett, S.A., Appl. Phys. Lett., 57, 2931 (1990).Google Scholar
[43] Brown, W.L., Elliman, R.G., Knoell, R.V., Leiberlich, A., Linnros, J., Maher, D.M., and Williams, J.S., in Microscopy of Semiconductor Materials, edited by Cullis, A.G. (Institute of Physics, London, (1987)), p. 61.Google Scholar
[44] Im, J.S. and Atwater, H.A., Appl. Phys. Lett., 57, 1766 (1990).Google Scholar
[45] Atwater, H.A., Thompson, C.V. and Smith, H.I., Phys. Rev. Lett., 60, 112 (1988).Google Scholar
[46] Picraux, S.T., Brice, D.K., Horn, K.M., Tsao, J.Y. and Chason, E., Nucl. Instr. and Meth., B48, 414 (1990).Google Scholar
[47] Murty, M.V.R., Lee, H.S., and Atwater, H.A., Mat. Res. Soc. Symp. Proc, 193, 301 (1990).Google Scholar
[48] Murty, M.V.R., and Atwater, H.A., Mat. Res. Soc. Symp. Proc, 223, 21 (1991); Phys. Rev. B, in press.Google Scholar
[49] Lagally, M.G., Mo, Y-W, Kariotis, R., Swartzentruber, B.S., and Webb, M.B., in Kinetics of Ordering and Growth at Surfaces, Lagally, M.G. ed., Plenum, New York, (1990), pp. 145–168.Google Scholar