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Ecr Etching of GaP, GaAs, InP, and InGaAs in Cl2/Ar, Cl2/N2, BCl3/Ar, and BCl3/N2

Published online by Cambridge University Press:  10 February 2011

R. J. Shul ,
A. G. Baca ,
D. J. Rieger ,
H. Hou ,
S. J. Pearton  and
F. Ren
R. J. Shul
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–0603
A. G. Baca
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–0603
D. J. Rieger
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–0603
H. Hou
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–0603
S. J. Pearton
Affiliation:
University of Florida, Gainesville, FL 32611
F. Ren
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

Electron cyclotron resonance (ECR) etching of GaP, GaAs, InP, and InGaAs are reported as a function of percent chlorine-containing gas for Cl2/Ar, Cl2/N2, BCl3/Ar, and BCl3/N2 plasma chemistries. GaAs and GaP etch rates were faster than InP and InGaAs, independent of plasma chemistry due to the low volatility of the InClx, etch products. GaAs and GaP etch rates increased as %Cl2 was increased for Cl2/Ar and Cl2/N2 plasmas. The GaAs and GaP etch rates were much slower in BCl3-based plasmas due to lower concentrations of reactive Cl, however enhanced etch rates were observed in BCl3/N2 at 75% BCl3. Smooth etched surfaces were obtained over a wide range of plasma chemistries.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 245
Copyright
Copyright © Materials Research Society 1996

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