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Effect of Argon Ion Bombardment on the Stability of Narrow Cobalt Silicide/Polysilicon Structure

Published online by Cambridge University Press:  03 September 2012

Jer-Shen Maa  and
Chien-Hsiung Peng
Jer-Shen Maa
Affiliation:
Sharp Microelectronics Technology, 5700 NW Pacific Rim Blvd., Camas WA 98607, JSM@smtmhs.sharpwa.com
Chien-Hsiung Peng
Affiliation:
Sharp Microelectronics Technology, 5700 NW Pacific Rim Blvd., Camas WA 98607, JSM@smtmhs.sharpwa.com
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Abstract

The stability of cobalt silicide formed on narrow polysilicon line degraded rapidly with shrinkage of linewidth as shown by the increase of sheet resistance after annealing. Stability was improved by adding a titanium interlayer under cobalt with or without a Ti or TiN cap layer. The stability was affected by silicide thickness and substrate doping. In best cases an increase of sheet resistance after annealing was still observed. Adding an Ar ion bombardment step improved the thermal stability drastically. This structure did not show any sheet resistance change after a 30 min annealing at 850°C, either with or without interlayer or cap layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 301
Copyright
Copyright © Materials Research Society 1997

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