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Effect of Atomic Hydrogen on Impurity Reduction in Mombe-Grown GaAs

Published online by Cambridge University Press:  28 February 2011

Y.C. Kao ,
T.S. Kim ,
H.D. Shih ,
S. Matteson ,
W.M. Duncan  and
D.L. Farrington
Y.C. Kao
Affiliation:
Texas Instruments Inc., Central Research Laboratories, P.O. Box 655936, MS147, Dallas, TX 75265
T.S. Kim
Affiliation:
Texas Instruments Inc., Central Research Laboratories, P.O. Box 655936, MS147, Dallas, TX 75265
H.D. Shih
Affiliation:
Texas Instruments Inc., Central Research Laboratories, P.O. Box 655936, MS147, Dallas, TX 75265
S. Matteson
Affiliation:
University of North Texas, Center for Materials Characterization, Denton, TX 76203
W.M. Duncan
Affiliation:
Texas Instruments Inc., Central Research Laboratories, P.O. Box 655936, MS147, Dallas, TX 75265
D.L. Farrington
Affiliation:
Texas Instruments Inc., Central Research Laboratories, P.O. Box 655936, MS147, Dallas, TX 75265
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Abstract

In this paper, the effect of atomic hydrogen on carbon impurity incorporation during the metalorganic-molecular-beam-epitaxy (MOMBE) growth of GaAs is studied. Atomic hydrogen was introduced into the MOMBE chamber during the growth by cracking molecular hydrogen with a high temperature cracker cell. Atomic hydrogen appears to be effective in reducing the background doping level of MOMBE-grown GaAs, presumably by reacting with hydrocarbon radicals. Background doping levels as low as 4 × 1014 cm−3 and room temperature hole mobilities as high as 430 cm2/V-sec were achieved. This result demonstrates that it is feasible to grow high quality GaAs films in MOMBE without using AsH3 or a high flux of As4by introducing atomic hydrogen into the chamber during the growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 57
Copyright
Copyright © Materials Research Society 1989

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References

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