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Effect Of Atomic-Hydrogen Treatment Of (001) Gaas Substrate At “High Temperatures” On Rf Plasma-Assisted Molecular Beam Epitaxy Of Cubic Gan

Published online by Cambridge University Press:  10 February 2011

A. Yoshikawah ,
H. Nagano ,
Z. X. Qiny ,
Y. Sugure ,
A. W. Jia ,
M. Kobayashi ,
M. Shimotomai ,
Y. Kato  and
K. Takahashi
A. Yoshikawah
Affiliation:
Department of Electrical and Electronics Engineering, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263 Japan, yoshi@cute.te.chiba-u.ac.jp
H. Nagano
Affiliation:
Department of Electrical and Electronics Engineering, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263 Japan, yoshi@cute.te.chiba-u.ac.jp
Z. X. Qiny
Affiliation:
Department of Electrical and Electronics Engineering, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263 Japan, yoshi@cute.te.chiba-u.ac.jp
Y. Sugure
Affiliation:
Department of Electrical and Electronics Engineering, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263 Japan, yoshi@cute.te.chiba-u.ac.jp
A. W. Jia
Affiliation:
Department of Electrical and Electronics Engineering, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263 Japan, yoshi@cute.te.chiba-u.ac.jp
M. Kobayashi
Affiliation:
Department of Electrical and Electronics Engineering, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263 Japan, yoshi@cute.te.chiba-u.ac.jp
M. Shimotomai
Affiliation:
Department of Electrical and Electronics Engineering, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263 Japan, yoshi@cute.te.chiba-u.ac.jp
Y. Kato
Affiliation:
Department of Electrical and Electronics Engineering, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263 Japan, yoshi@cute.te.chiba-u.ac.jp
K. Takahashi
Affiliation:
Department of Electronics and Information Science, Teikyo University of Science & Technology, 2525 Yatsuzawa, Uenohara, Kitatsurugun, Yamanashi 409-01 Japan
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Abstracts

Growth of high quality c-GaN on atomic-H treated (001) GaAs was examined by rf plasma-assisted MBE. First the initial growth stages (atomic-H treatment of GaAs, nitridation/deposition of a thin GaN buffer layer, the post deposition annealing of the buffer layer, and epitaxy of c-GaN) were studied by RHEED and AFM observations. It was found that atomically flat GaAs surface with one monolayer-height steps and ragged step edges could be obtained by the atomic-H treatment at high temperatures. It was found that the atomic-H treated GaAs surface was preferable to grow high quality c-GaN; the FWHM of the X-ray rocking curve for the (002) c-GaN was as small as 70 – 90 arcsec.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 227
Copyright
Copyright © Materials Research Society 1998

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