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Effect of Channel Profile Engineering on Hot Carrier Reliability in nMOSFETs with 100 nm Channel Lengths

Published online by Cambridge University Press:  10 February 2011

Samar K. Saha
Samar K. Saha*
Affiliation:
Technology Modeling Associates, Inc., Sunnyvale, CA 94086–3922, samar_saha@tmai.com
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Abstract

Hot-carrier effect was studied for different channel doping profiles in nMOSFET devices with effective channel length near 100 nm using a device simulator. The test structures for device simulation were generated using gate oxide thickness of 3 nm. The channel doping profiles used were abrupt- and graded-retrograde types with low surface and high substrate concentrations, and conventional step profiles with high surface and low substrate concentrations. For accurate device simulation, a hydrodynamic model for semiconductors was used to simulate the non-local transport phenomena in the devices. The simulation results indicate that for ultra-short channel devices, the current drivability and the hot-carrier effects depend on the shape of channel doping profiles. For a given supply voltage, the hot-carrier effects in ultra-short channel devices can be controlled by optimizing the channel doping profiles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 473: Symposium J – Materials Reliability in Microelectronics VII , 1997 , 191
Copyright
Copyright © Materials Research Society 1997

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References

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