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Effect of Filament Material on the Decomposition of SiH4 in Hot Wire CVD of Si-Based Films

Published online by Cambridge University Press:  01 February 2011

H. L. Duan ,
G. A. Zaharias  and
Stacey F. Bent
H. L. Duan
Affiliation:
Department of Chemical EngineeringStanford University Stanford, CA 94305
G. A. Zaharias
Affiliation:
Department of Chemical EngineeringStanford University Stanford, CA 94305
Stacey F. Bent
Affiliation:
Department of Chemical EngineeringStanford University Stanford, CA 94305
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Abstract

The choice of filament material has an effect on the decomposition of silane during the hot wire chemical vapor deposition (HW-CVD) of amorphous and microcrystalline silicon films. The Si radicals produced from W, Re, Mo and Ta filament materials have been probed by laserbased single photon ionization (SPI) as a function of hot wire temperature. The Si radical profiles are shown to demonstrate two distinct regimes: a regime below 1600°C-1800°C (depending on filament material) limited by surface reaction at the filament in which Si concentration increases monotonically; and a mass transfer limited regime above 1600°C-1800°C where Si intensity saturates. The apparent activation energy of Si radical production in the surface reaction regime from Ta (140-170 kcal/mol) is found to be close to the corresponding Si thermal desorption energy from a Ta surface, suggesting that the Si production is controlled by the desorption process from the bare metal. On the other hand, the Si activation energies from W and Re (30-60 kcal/mol) are lower than the related desorption energies, suggesting that other rate limiting reactions play a role for these materials. The apparent activation energy for the Mo surface (60-90 kcal/mol) is intermediate between the other metal values. In addition to the Si radical study, corresponding film deposition is detected in situ by multiple internal reflection infrared (MIR-IR) spectroscopy. The IR measurements have been used to estimate the growth rate of a-Si:H deposited on a Ge substrate. The results show similar activation energies for both the growth rate and the Si formation from a W filament, implying that Si radical production and subsequent film growth may be dominated by the same elementary reactions within the decomposition and film growth processes at low pressure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A15.5
Copyright
Copyright © Materials Research Society 2002

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