Hostname: page-component-76fb5796d-x4r87 Total loading time: 0 Render date: 2024-04-26T20:27:39.372Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Hydrogen Treatment on High Efficiency Electroluminescence Device Using Silicon Nanocrystals

Published online by Cambridge University Press:  17 March 2011

K. Sato ,
T. Izumi ,
M. Iwase ,
Y. Show ,
S. Nozaki  and
H. Morisaki
K. Sato
Affiliation:
Department of Electronics, Faculty of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka-shi, Kanagawa 259-1292, JAPAN
T. Izumi
Affiliation:
Department of Electronics, Faculty of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka-shi, Kanagawa 259-1292, JAPAN
M. Iwase
Affiliation:
Department of Electrical Engineering, Faculty of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka-shi, Kanagawa 259-1292, JAPAN
Y. Show
Affiliation:
Department of Communications and Systems, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu-shi, Tokyo 182-8585, JAPAN
S. Nozaki
Affiliation:
Department of Communications and Systems, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu-shi, Tokyo 182-8585, JAPAN
H. Morisaki
Affiliation:
Department of Communications and Systems, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu-shi, Tokyo 182-8585, JAPAN
Get access

Abstract

We have fabricated the electroluminescence (EL) device using silicon (Si) nanocrystals, which were formed on Si substrate by co-sputtering of Si and silicon dioxide (SiO2). By treating with the Si nanocrystals in the hydrofluoric (HF) acid solution, the SiO2 region of the luminous layer reduced, and then, the electrons were efficiently injected in the Si nanocrystals. At the same time, Pb-center (non-radiative recombination center) was decreased by hydrogen termination to the Si-dangling bond in the interface between the Si nanocrystals and the SiO2 layer From these effects of the HF treatment, the high efficiency red light emission with the external quantum efficiency (EQE) of 0.35 % was obtained from the HF treated EL device under the operating voltage of +4.5 V.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F14.30.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Canham, L. T., Appl. Phys. Lett., 57, 1046 (1990).Google Scholar
2. Shimizu-Iwayama, T., Nakao, S. and Saitoh, K., Appl. Phys. Lett., 65, 1814 (1994).Google Scholar
3. Mutti, P., Ghisloti, G., Bertoni, S., Bonolsi, L., Cerofolni, G. F., Meda, L., Grilli, E. and Guzzi, M., Appl. Phys. Lett., 66, 851 (1995).Google Scholar
4. Komoda, T., Kelly, J., Cristiano, F., Nejim, A., Hemment, P. L. F., Homewood, K. P., Gwilliam, R., Mynard, J. E. and Sealy, B. J., Nucl. Instrum. Meth. Phys. Res., B96, 387 (1995).Google Scholar
5. Lial, L. S., Bao, X. M., Zheng, X. Q., Li, N. S. and Min, N. B., Appl. Phys. Lett., 68, 850 (1996).Google Scholar
6. Song, H. Z., Bao, X. M., Li, N. S. and Zhang, J. Y., J. Appl. Phys., 82, 4028 (1997).Google Scholar
7. Sato, K., Sugiyama, Y., Iwase, M., Izumi, T., Show, Y., Nozaki, S. and Morisaki, H., Mat. Res. Soc. Symp. Proc., 536, 57 (1999).Google Scholar
8. Koshida, N. and Koyama, H., Appl. Phys. Lett., 60, 347 (1992).Google Scholar
9. Gelloz, B., Nakagawa, T. and Koshida, N., Appl. Phys. Lett., 73, 2021 (1998).Google Scholar
10. Richter, A., Steiner, P., Kozlowski, F. and Lang, W., IEEE Electron Device Lett., 12, 691 (1991).Google Scholar
11. DiMaria, D. J., Kirtley, J. R., Pakulis, E. J., Dong, D. W., Kuan, T. S., Pesavento, F. L., Theis, T. N., Cutro, J. A. and Brorson, S. D., J. Appl. Phys., 56, 401 (1984).Google Scholar
12. Tompa, G. S., Morton, D. C., Monmouth, F. T., Sywe, B. S., Lu, Y., Forsythe, E. W., Ott, J. A., Smith, D., Khurgin, J. B., Khan, B. A. and Phlips, N. A., Mat. Res. Soc. Symp. Proc., 358, 701 (1995).Google Scholar
13. Tong, S., Liu, X. N., Wang, L. C., Yan, F. and Bao, X. M., Appl. Phys. Lett., 69, 596 (1996).Google Scholar
14. Liao, L. S., Bao, X. M., Li, N. S., Zheng, X. Q. and Min, N. B., Solid State Commun., 97, 1039 (1996).Google Scholar
15. Sato, K., Sugiyama, Y., Izumi, T., Iwase, M., Show, Y., Nozaki, S. and Morisaki, H., Electrochem. Soc. Proc., 99–22, 240 (1999).Google Scholar