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Effect of lateral dimension scaling on thermal stability of thin CoSi2 layers on polysilicon implanted with Si

Published online by Cambridge University Press:  10 February 2011

F. La Via ,
A. Alberti ,
M. G. Grimaldi  and
S. Ravesi
F. La Via
Affiliation:
CNR-IMETEM, Stradale Primosole 50, Catania, Italy
A. Alberti
Affiliation:
Physics Department, Catania University, Corso Italia 57, Catania, Italy
M. G. Grimaldi
Affiliation:
Physics Department, Catania University, Corso Italia 57, Catania, Italy
S. Ravesi
Affiliation:
S-T Microelectronics, Stradale Primosole 50, Catania, Italy
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Abstract

The thermal stability of patterned cobalt silicide layers grown on amorphous silicon has been studied in the temperature range between 850 and 1000 °C. The degradation of patterned CoSi2, detected by resistance measurements, occurs via grain agglomeration at a temperature ∼100 °C lower than in blanket film. The reduction of the stability window in patterned samples is due to geometric constraints,. which results in a greater growth rate of the median grains with respect to lateral grains.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 514: Symposium I – Advanced Interconnects & Contact Materials & Processes for… , 1998 , 381
Copyright
Copyright © Materials Research Society 1998

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References

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