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Effect of Oxygen ION Implantation in Gallium Nitride

Published online by Cambridge University Press:  15 February 2011

W. Jiang ,
W.J. Weber ,
S. Thevuthasan ,
G.J. Exarhos  and
B.J. Bozlee
W. Jiang
Affiliation:
Pacific Northwest National Laboratory, Richland, WA 99352, weilin.jiang@pnl.gov
W.J. Weber
Affiliation:
Pacific Northwest National Laboratory, Richland, WA 99352, weilin.jiang@pnl.gov
S. Thevuthasan
Affiliation:
Pacific Northwest National Laboratory, Richland, WA 99352, weilin.jiang@pnl.gov
G.J. Exarhos
Affiliation:
Pacific Northwest National Laboratory, Richland, WA 99352, weilin.jiang@pnl.gov
B.J. Bozlee
Affiliation:
University of Great Falls, Great Falls, MT 59405
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Abstract

Epitaxial single crystal GaN films (2.0 μtm thick) were implanted 60° off the <0001> surface normal with 600 keV O+ ions at 190 or 210 K over a range of ion fluences from 4.8x 1017 to 5.0 × 1020 ions/m2. The implantation damage, as determined by in-situ Rutherford Backscattering Spectrometry in a <0001> channeling geometry (RBS/C), ranged from dilute defects up to the formation of a disorder saturation state that was not fully amorphous. The relative disorder on the Ga sublattice exhibited a sigmoidal dependence on ion fluence. Results show that GaN crystals are extremely resistant to the ion implantation damage as compared to other ceramic materials like SiC. An asymmetric shape in the angular scan curve around the <0001> axis, which might be associated with the Ga lattice distortion in the crystal structure, was observed for the as-irradiated material to the highest ion fluence (5.o× 1020 O+/m2) at 210 K. Comparisons of Ga disorder depth-profiles from the experiment and SRIM97 simulations suggest that the damage peaks shift to greater depths at the low irradiation temperature (210 K). Significant recovery of these defects was not observed in the isochronal annealing steps (20-min) up to 970 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G6.15
Copyright
Copyright © Materials Research Society 1999

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