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Effect Of pH On Chemical-Mechanical Polishing Of Copper And Tantalum

Published online by Cambridge University Press:  18 March 2011

Anurag Jindal ,
Ying Li  and
S. V. Babu
Anurag Jindal
Affiliation:
Departments of Chemical and Mechanical
Ying Li
Affiliation:
Engineering Center For Advanced Materials Processing Clarkson University, Potsdam, NY 13699
S. V. Babu
Affiliation:
Departments of Chemical and Mechanical
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Abstract

pH has a strong effect on the polish rates of copper (Cu) and tantalum (Ta) [1]. In this paper, removal rates of Cu and Ta using aqueous slurries containing alumina and silica abrasives in H2O2-glycine solution are studied at varying pH values. It is observed that variation in the Cu and Ta removal rates is a direct result of the change in surface characteristics of the films. Surface characteristics such as presence/absence of a passivating layer and hardness of such layer vary with pH and hence result in removal rate variation. It is also shown that a favorable Cu/Ta polish rate selectivity can be obtained by adjusting the pH of the slurry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 671: Symposium M – Chemical-Mechanical Polishing 2001–Advances and Future Challenges , 2001 , M6.8
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Ramarajan, S., Li, Y., Hariharputhiran, M., Her, Y.-S., and Babu, S.V., Electrochem. and Solid State Letters, 3(5) (2000) 232–235 10.1149/1.1391010Google Scholar
2. Luo, Q., Campbell, D.R., and Babu, S.V., Thin Solid Films, 311 (1997) 177–182.10.1016/S0040-6090(97)00454-9Google Scholar
3. Carpio, R., Fracas, J., and Jairath, R., Thin Solid Films, 266, 238 (1995).10.1016/0040-6090(95)06649-7Google Scholar
4. Steigerwald, J.M., Murarka, S.P., and Gutmann, R.J., Chemical-Mechanical Planarization of Microelectronic Materials, John Wiley & Sons, 1997.10.1002/9783527617746Google Scholar
5. Luo, Q., and Babu, S.V., J. Electrochemical Society, 147(12), 2000.10.1149/1.1394116Google Scholar
6. Pourbaix, M., Atlas of Electrochemical Equilibria in Aqueous Solutions, NACE, Houston, TX (1975).Google Scholar
7. Ramarajan, S., Hariharputhiran, M., Her, Y.-S., and Babu, S.V., Surface Engineering, 15 (4), 1999.10.1179/026708499101516696Google Scholar
8. Hariharputhiran, M., Li, Y., Ramarajan, S. and Babu, S.V., Electrochemical and Solid State Letters, 3(2), 95–98 (2000).Google Scholar
9. Li, Y., Jindal, A., and Babu, S.V., Proc. Electrochem. Soc. 198th Meeting, Phoenix, AZ, Oct. 22–27 (2000)Google Scholar
10. Hariharputhiran, M., Zhang, J., Ramarajan, S., Keleher, J.J., Li, Y., and Babu, S.V., J. Electrochem. Soc., 147 (10) (2000) 3820–3826 Google Scholar