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The effect of silicon on thermal stability and wear behavior of diamond-like carbon films

Published online by Cambridge University Press:  10 February 2011

Weng-Jin Wu  and
Min-Hsiung Hon
Weng-Jin Wu
Affiliation:
Department of Materials Science and Engineering(62932), National Cheng Kung University, 70101, Tainan, Taiwan
Min-Hsiung Hon
Affiliation:
Department of Materials Science and Engineering(62932), National Cheng Kung University, 70101, Tainan, Taiwan
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Abstract

The diamond-like carbon (DLC) films added with silicon content from Oat% to 19.2at% were deposited using R.F. PECVD. By increasing the annealing temperature the groups of CHn and Si-H in FTIR spectra of the deposited films decrease because of hydrogen evolution, whereas the intensity of C=O and Si-O peaks increases due to oxidation. From Raman spectra, the observable shoulder of D band occurs at 400°C and 500°C respectively, which indicates that the addition of silicon improves the thermal stability of DLC films. A pin-on-disk wear test was conducted to investigate the wear behavior of the DLC films. DLC film with small amount of silicon addition has a lower friction coefficient (0.01) than the undoped one(0.1). Raman analysis showed that in wear test the graphitization of pure DLC film occurs at the initial stage whereas for the silicon containing DLC, graphitization of wear debris or transferred film was not observed after the wear test.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 555: Symposium OO – Properties and Processing of Vapor-Deposited Coatings , 1998 , 339
Copyright
Copyright © Materials Research Society 1999

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