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The Effect of Substrate Annealing on Epitaxial Growth in Mbe—Grown Silicon on Sapphire.

Published online by Cambridge University Press:  28 February 2011

Joseph G. Pellegrino ,
Eliezer D. Richmond  and
Mark F. Twigg
Joseph G. Pellegrino
Affiliation:
502, Fort Washington MD 20744
Eliezer D. Richmond
Affiliation:
Naval Research Laboratory, Code 6816, Washington, D.C. 20375
Mark F. Twigg
Affiliation:
GEO Centers Inc., 10903 Indian Head Highway
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Abstract

We have continued our investigation1 of the effects of pre—deposition substrate annealing for the case of MBE grown silicon on sapphire. Three identical series of samples were grown with film thicknesses ranging between 65 and 1500 angstroms. Each series of samples was grown upon sapphire which had been annealed at either 1450ºC, 1300ºC, or 900ºC. The growth temperature and growth rate were the same for each series. The anneal time for each sample was 30 minutes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 389
Copyright
Copyright © Materials Research Society 1988

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References

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