Hostname: page-component-76fb5796d-wq484 Total loading time: 0 Render date: 2024-04-26T03:49:21.889Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Substrate Orientation on the Growth Rate and Surface Morphology on GaSb Grown by Metal-Organic Vapor Phase Epitaxy

Published online by Cambridge University Press:  01 February 2011

Jian Yu  and
Ishwara B. Bhat
Jian Yu
Affiliation:
Department of Electrical, Computer and Systems Engineering Rensselaer Polytechnic Institute, Troy, NY 12180
Ishwara B. Bhat
Affiliation:
Department of Electrical, Computer and Systems Engineering Rensselaer Polytechnic Institute, Troy, NY 12180
Get access

Abstract

MOVPE of GaSb grown on (100), (111)A and (111)B GaSb substrates were investigated to study the effect of substrate orientation on the growth rate and surface morphology. Besides growth temperature and V/III ratio, the GaSb growth rate strongly depends on the crystallographic orientation. As the V/III ratio rises, the growth rate on the (111)B oriented substrate decreases, whereas that on the (111)A oriented substrate increases. The surface morphology on different substrates was studied by scanning electron microscopy (SEM) and atomic force microscopy (AFM). On (111)A substrates, triangular hillocks are the dominant defects, while on (111)B planes, three distinct types of hexagonal hillocks are observed, namely, non-flat top hexagonal structure with spiral growth features (Type I), flat top structure with lateral growth features (Type II), and non-flat top hexagonal structure with multiple islands (Type III). For all types, the basal edges of each hillock are preferentially aligned along <110> directions. A closer look reveals that the top surface of Type II feature consists of many levels of small hexagonal shaped terraces, with each step height in the monolayer range, indicating a step flow growth involved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E9.33
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Haywood, S.K., Henriques, A.B., Mason, N.J., Nicholas, R.J., and Walker, P.J., Semicond. Sci. and Technol. 3 (4), 315–320 (1988).Google Scholar
2 Zenker, M., Heinzel, A., Stollwerck, G., Ferber, J., and Lurther, J., IEEE Transaction on Electron Devices, 48 (2), 367–376 (2001).Google Scholar
3 Hitchcock, C.W., Gutmann, R.J., Borrego, J.M., Bhat, I.B., and Charache, G.W., IEEE Transaction on Electron Devices, 46 (10), 2154–2161 (1999).Google Scholar
4 Bett, A.W. and Sulima, O.V., Semicond. Sci. Technol. 18 S184–S190 (2003).Google Scholar
5 Alphandéry, E., Nicholas, R. J., Mason, N. J., Zhang, B., Möck, P. and Booker, G. R., Appl. Phys. Lett. 74 (14), 2041–2043 (1999).Google Scholar
6 Zhang, B., Zhou, T., Jiang, H., Ning, Y., and Jin, Y., Electronics Letters, 31 (10), 830–832 (1995).Google Scholar
7 Kamon, K., Shimazu, M., Kimura, K., Mihara, M. and Ishii, M., J. Cryst. Growth 84 (1), 126–132 (1987).Google Scholar