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Effect of Surface Treatments in Nanocrystalline Silicon

Published online by Cambridge University Press:  11 February 2011

N. P. Mandal ,
S. Dey  and
S. C. Agarwal
N. P. Mandal
Affiliation:
Department of Physics, Indian Institute of Technology Kanpur, 208016, India
S. Dey
Affiliation:
Department of Physics, Indian Institute of Technology Kanpur, 208016, India
S. C. Agarwal
Affiliation:
Department of Physics, Indian Institute of Technology Kanpur, 208016, India
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Abstract

Exposure to ammonia (NH3) increases the dark current (DC) in porous silicon (PS), but evaporated selenium (Se) deposited on PS decreases DC. Photoluminescence (PL) measurement shows that there are two types of centers. PL in one region of PS (Peak ∼ 800nm) initially increases with the NH3 exposure and then decreases. But the PL from another region of PS has a peak at ∼ 780nm and it decreases continuously with the NH3 exposure. Dipping PS in water and drying in air shifts the PL peak at 800 nm to 744 nm. Atomic Force Microscopy (AFM) shows that the as prepared sample has wires of diameters 2.4nm, 3.4nm, 4.6nm and bigger. However, in the AFM images of the water treated sample the wires of diameters 3.4nm and 4.6nm are absent. The PL results are explained using the AFM data and the John-Singh model of quantum confinement.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , F3.51
Copyright
Copyright © Materials Research Society 2003

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