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Effects of Carbon Grading at the p/i Interface on the Open Circuit Voltage of p-i-n and n-i-p Amophous Silicon Solar Cells
Published online by Cambridge University Press: 26 February 2011
Abstract
Carbon grading in the buffer layer at the p/i interface increases the open circuit voltage of both p-i-n and n-i-p amorphous silicon solar cells. We propose that carbon grading enlarges the electric field and reduces the electron tunneling at the p/i interface.
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- Copyright © Materials Research Society 1987
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