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Effects of Gamma-Ray Irradiation and Thermal Annealing on Characteristics of 3C-SIC MOS Structure

Published online by Cambridge University Press:  25 February 2011

M. Yoshikawa ,
Y. Morita ,
H. Itoh ,
I. Nashiyama ,
H. Okumura ,
S. Misawa  and
S. Yoshida
M. Yoshikawa
Affiliation:
Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370–12Japan
Y. Morita
Affiliation:
Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370–12Japan
H. Itoh
Affiliation:
Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370–12Japan
I. Nashiyama
Affiliation:
Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370–12Japan
H. Okumura
Affiliation:
Electrotechnical Laboratory, 1–1–4, Umezono, Tukuba, Ibaraki 305, Japan.
S. Misawa
Affiliation:
Electrotechnical Laboratory, 1–1–4, Umezono, Tukuba, Ibaraki 305, Japan.
S. Yoshida
Affiliation:
Electrotechnical Laboratory, 1–1–4, Umezono, Tukuba, Ibaraki 305, Japan.
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Abstract

Thermal annealing of interface traps introduced by 60Co gamma-ray irradiation in 3C-SiC metal-oxide-semiconductor (MOS) structures have been studied by high-frequency capacitance-voltage measurements. By isochronal annealing up to 400°C, two recovery stages were observed, which correspond to the annealing of two different types of the interface traps. It was found that introduction of the interface traps was suppressed by thermal annealing before irradiation. Radiation tolerance of 3C-SiC MOS structure is explained in terms of the room temperature annealing of the interface traps introduced by irradiation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 797
Copyright
Copyright © Materials Research Society 1993

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References

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