Hostname: page-component-848d4c4894-pftt2 Total loading time: 0 Render date: 2024-05-05T02:08:31.124Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Grain Boundaries on the Current-Voltage Characteristics of SOI Mosfets

Published online by Cambridge University Press:  21 February 2011

Jerry G. Fossum  and
Adelmo Ortiz-Conde
Jerry G. Fossum
Affiliation:
Department of Electrical Engineering, University of Florida, Gainesville, FL 32611
Adelmo Ortiz-Conde
Affiliation:
Department of Electrical Engineering, University of Florida, Gainesville, FL 32611
Get access

Abstract

A physical model that describes the steady-state current-voltage characteristics of field-effect transistors (MOSFETs) fabricated in (poly)silicon-on-insulator (SOI) is described. The model predicts that a single high-angle grain boundary, especially one traversing the channel near the drain, can control the conduction properties of the MOSFET for all (weak-to-strong) inversion conditions in all (linear-to-saturation) regions of operation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 33: Symposium D – Comparison of Thin Film Transistor and SOI Technologies , 1984 , 199
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Lam, H. W., Tasch, A. F., Jr., and Pinizzotto, R. F., in VLSI Electronics: Microstructure Science, Vol.4 (Academic Press, New York 1982).Google Scholar
2. Fossum, J. G. and Ortiz-Conde, A., IEEE Trans. Electron Devices ED-30, 933 (1983).Google Scholar
3. Ortiz-Conde, A. and Fossum, J. G., IEEE Electron Device Lett. EDL-4, 344 (1983).Google Scholar
4. Brews, J. R., Solid-State Electron. 21, 345 (1978).Google Scholar
5. Lim, H.-K. and Fossum, J. G., IEEE Trans. Electron Devices ED-30, 1244 (1983); IEEE Trans. Electron Devices ED-31 (1984).Google Scholar
6. Mueller, R. K., J. Appl. Phys. 32, 635 (1961).Google Scholar
7. Baccarani, G., Impronta, M., Ricco, B., and Ferla, P., Rev. Phys. Appl. 13, 777 (1978).Google Scholar
8. Ortiz-Conde, A., unpublished.Google Scholar
9. Colinge, J.-P., Morel, H., and Chante, J.-P., IEEE Trans. Electron Devices ED-30, 197 (1983).CrossRefGoogle Scholar