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The Effects of La Concentration on the Properties of PLT Thin Films: From the Perspective of Dram Applications

Published online by Cambridge University Press:  15 February 2011

Seong Jun Kang ,
Jeong Seon Ryoo  and
Yung Sup Yoon
Seong Jun Kang
Affiliation:
Department of Electronic Materials & Device Engineering, Inha University, Inchon 402–751, Korea
Jeong Seon Ryoo
Affiliation:
Department of Electronic Materials & Device Engineering, Inha University, Inchon 402–751, Korea
Yung Sup Yoon
Affiliation:
Department of Electronic Materials & Device Engineering, Inha University, Inchon 402–751, Korea
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Abstract

We have studied the effects of La concentration on the dielectric and ferroelectric properties of lead lanthanum titanate (PLT) thin films by using sol-gel method. Both the dielectric and ferroelectric properties were greatly affected by the La concentration. The dielectric constants of the films varied from 340 to 870 with varying La concentration in the range from 15 to 33 mol%. Hysteresis loop became slimmer with the increase of La concentration from 15 to 28 mol% and a little fatter again with the increase of La concentration from 28 to 33 mol%. Among the films investigated in this research, PLT(28) thin film showed the best dielectric properties for the application to the dielectrics of ULSI DRAM's. At the frequency of 100 Hz, the dielectric constant and the loss tangent of PLT(28) thin film were 940 and 0.08, respectively. Its leakage current density at 1.5×10 V/cm was 1×10−6 A/cm2. The comparison between the simulated and the experimental curves for the switching transient characteristics showed that PLT(28) thin film behaved like normal dielectrics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 281
Copyright
Copyright © Materials Research Society 1995

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References

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