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The Effects of Low Energy Ion-Beam Milling on the Physical and Electrical Properties of N-GaAs.

Published online by Cambridge University Press:  21 February 2011

W.F. Seng ,
P.A. Barnes ,
M.L. Lovejoy ,
L.P. Fu ,
G.D. Gilliland  and
D. Ila
W.F. Seng
Affiliation:
Department of Physics, Auburn University, AL 36849-5311 Department of Physics, Michigan Technological University, Houghton, MI
P.A. Barnes
Affiliation:
Department of Physics, Auburn University, AL 36849-5311
M.L. Lovejoy
Affiliation:
Department of Physics, Auburn University, AL 36849-5311
L.P. Fu
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
G.D. Gilliland
Affiliation:
Department of Physics, Emory University, Atlanta, GA 30322
D. Ila
Affiliation:
Alabama A&M University, Center for Irradiation of Materials, Normal, AL 35762
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Abstract

Low energy neutral Ar ion-beam etching of n-GaAs was investigated as a possible “cleaning” procedure prior to contact metallization. The ion-beam source energy was varied between 35 eV and 1200 eV at a fixed current density of 1 mA/cm2. The effects of ion-milling on lightly doped n-GaAs were analyzed electrically by measuring current-voltage (IV) and capacitance-voltage (CV) characteristics of Schottky barriers formed after the ion-milling. The metal semiconductor barriers were prepared immediately following ion-milling without breaking vacuum. Photoluminescence and Rutherford Backscattering (RBS) were used to determine if any physical modification of the surface and near surface region of the ion-milled substrates had occurred.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 807
Copyright
Copyright © Materials Research Society 1996

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