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Effects of Nitrogen on Preventing the Crystallization of Amorphous Ta-Si-N Diffusion Barrier

Published online by Cambridge University Press:  10 February 2011

Dong Joon Kim ,
Soon Pil Jeon ,
Yong Tae Kim  and
Jong-Wan Park
Dong Joon Kim
Affiliation:
semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, Korea, ytkim@kistmail.kist.re.kr Dept. of Metallurgical Engineering, Hanyang University, 17, Haengdang-dong, Seongdong-ku, Seoul, 133–791
Soon Pil Jeon
Affiliation:
semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, Korea, ytkim@kistmail.kist.re.kr
Yong Tae Kim
Affiliation:
Dept. of Metallurgical Engineering, Hanyang University, 17, Haengdang-dong, Seongdong-ku, Seoul, 133–791
Jong-Wan Park
Affiliation:
semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, Korea, ytkim@kistmail.kist.re.kr
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Abstract

Amorphous Ta-Si-N thin film was deposited by dc sputterring of Ta5Si3 target in (Ar+N2) atmosphere. The crystal structure and the thermal stability of Ta-Si-N thin films were investigated by XRD, RBS, AES, Nomarski microscope, and TEM. When the concentration of nitrogen in Ta-Si-N thin film was higher than 40 at.%, the Ta-Si-N thin film remained the amorphous state after the annealing at 1100°C for 60 min. In this case, the Cu diffusion was prevented by the amorphous Ta-Si-N thin film even if the annealing temperature increased up to 900°C for 30 min. Whereas, the Ta-Si-N thin film with nitrogen concentration less than 40 at. % was transformed from the amorphous to the polycrystalline TaSi2 phases after the annealing at 900°C for 60 min and failed to prevent the Cu diffusion after the annealing at 700°C for 30 min.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 473: Symposium J – Materials Reliability in Microelectronics VII , 1997 , 247
Copyright
Copyright © Materials Research Society 1997

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References

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