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The Effects of Nucleation in the Two Step Growth of HVPE GaN

Published online by Cambridge University Press:  15 February 2011

P.R. Tavernier ,
E.V. Etzkorn ,
Y. Wang  and
D.R. Clarke
P.R. Tavernier
Affiliation:
Materials Department, University of California, Santa Barbara, CA 93106, tavernip@mrl.ucsb.edu.
E.V. Etzkorn
Affiliation:
Materials Department, University of California, Santa Barbara, CA 93106
Y. Wang
Affiliation:
Materials Department, University of California, Santa Barbara, CA 93106
D.R. Clarke
Affiliation:
Materials Department, University of California, Santa Barbara, CA 93106
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Abstract

The repeatable growth of high quality thick layers of GaN by hydride vapor phase epitaxy generally requires buffer layers or other surface pretreatments to produce morphologically smooth films suitable for further device growth. Of the conditions for high quality GaN growth, proper film nucleation invariably contributes most to the overall growth of high quality films and the exclusion of impurities. We have studied a two step growth process which incorporates a low temperature HVPE grown nucleation layer and have compared it to films grown without buffer layers to determine how the impurity content and the dislocation networks change the overall film quality. Additionally we observe the formation of macroscopic steps during growth with step heights of ∼0.75 μm and terrace widths of ∼ 7 μm, which we attribute to the initial conditions of the low temperature nucleation layer prior to growth and to kinetically limited growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 580: Symposium E – Nucleation & Growth Processes in Materials , 1999 , 357
Copyright
Copyright © Materials Research Society 2000

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