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Effects of Rapid Thermal Annealing on Heavily Boron Doped Silicon Epitaxial Layers

Published online by Cambridge University Press:  21 February 2011

Jianbao Wang ,
Qiang Xu ,
Fang Lu ,
Henghui Sun  and
Xun Wang
Jianbao Wang
Affiliation:
Fudan T. D. Lee Physics Laboratory, Fudan University, Shanghai, CHINA
Qiang Xu
Affiliation:
Fudan T. D. Lee Physics Laboratory, Fudan University, Shanghai, CHINA
Fang Lu
Affiliation:
Fudan T. D. Lee Physics Laboratory, Fudan University, Shanghai, CHINA
Henghui Sun
Affiliation:
Fudan T. D. Lee Physics Laboratory, Fudan University, Shanghai, CHINA
Xun Wang
Affiliation:
Fudan T. D. Lee Physics Laboratory, Fudan University, Shanghai, CHINA
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Abstract

The effects of rapid thermal annealing (RTA) on the electrical properties and the strain relaxation of the heavily boron doped silicon layers grown by molecular beam epitaxy have been studied by Hall effect measurements and double crystal x-ray diffraction. After the RTA treatment at temperatures above 1000°C, the increases of both carrier concentration and Hall mobility as well as the improvement of crystalline quality of epitaxial layers are acheived. It is verified that the lattice mismatch between the epitaxial layer and the Si substrate is proportional to the concentration of the substitutional boron rather than the total boron concentration. The lattice contraction coefficient ² is determined to be 5.3 (in units 10-24cm3) in the carrier concentration range of 0.75∼ 3×1020cnr-3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 355: Symposium B1 – Evolution of Thin-Film and Surface Structure and Morphology , 1994 , 637
Copyright
Copyright © Materials Research Society 1995

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References

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