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Effects of Spacer Thickness on the Performance of InGaAs/GaAs Quantum Dot Lasers

Published online by Cambridge University Press:  17 March 2011

Nien-Tze Yeh ,
Wei-Shen Liu ,
Shu-Han Chen  and
Jen-Inn Chyi
Nien-Tze Yeh
Affiliation:
Department of Electrical Engineering, National Central University Chung-Li, Taiwan 32054, R.O.C.
Wei-Shen Liu
Affiliation:
Department of Electrical Engineering, National Central University Chung-Li, Taiwan 32054, R.O.C.
Shu-Han Chen
Affiliation:
Department of Electrical Engineering, National Central University Chung-Li, Taiwan 32054, R.O.C.
Jen-Inn Chyi
Affiliation:
Department of Electrical Engineering, National Central University Chung-Li, Taiwan 32054, R.O.C.
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Abstract

It is found that the performance of self-assembled In0.5Ga0.5As/GaAs multi-stack quantum dot lasers is sensitive to the GaAs spacer thickness between the dots. Reducing the spacer thickness from 30 nm to 10 nm leads to narrow photoluminescence linewidth, low threshold current, high characteristic temperature and high internal quantum efficiency. This behavior is attributed to inhomogeneous broadening caused by dot size fluctuation related to spacer thickness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 642: Symposium J – Semiconductor Quantum Dots II , 2000 , J3.21.1
Copyright
Copyright © Materials Research Society 2001

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References

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