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Effects of Substrate Materials on Nanoindentation Tests of AlN Thin Films

Published online by Cambridge University Press:  11 February 2011

Shuichi Miyabe ,
Masami Aono ,
Nobuaki Kitazawa  and
Yoshihisa Watanabe
Shuichi Miyabe
Affiliation:
Department of Materials Science and Engineering, National Defense Academy, Yokosuka, Kanagawa 239–8686, Japan
Masami Aono
Affiliation:
Department of Materials Science and Engineering, National Defense Academy, Yokosuka, Kanagawa 239–8686, Japan
Nobuaki Kitazawa
Affiliation:
Department of Materials Science and Engineering, National Defense Academy, Yokosuka, Kanagawa 239–8686, Japan
Yoshihisa Watanabe
Affiliation:
Department of Materials Science and Engineering, National Defense Academy, Yokosuka, Kanagawa 239–8686, Japan
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Abstract

Aluminum nitride (AlN) thin films with different thickness were synthesized by ion-beam assisted deposition on various substrates, Corning 7059 glass, fused silica, Si single crystal, and sapphire, which show the hardness ranging from 7 to 37 GPa. Effects of substrate materials on indentation-hardness of AlN films were studied by using a nanoindentation system equipped with a diamond Berkovich indenter. The maximum force applied to the films was kept at 3 mN. For the films on the Corning 7059 glass substrate, when the normalized penetration depth to the film thickness is 0.98, the film hardness is found to be about 7 GPa, which is close to the hardness of the substrate. While the normalized penetration depth is reduced to 0.11, the film hardness becomes to be about 16 GPa. On the other hand, for the films on the sapphire substrate, when the normalized penetration depth is 0.83, the film hardness is observed to be about 25 GPa, while the normalized penetration depth is reduced to 0.10, the film hardness is found to be about 15 GPa. These results reveal that when the normalized penetration depth to the film thickness is about 0.1, the hardness of the AlN film can be evaluated to be about 15 GPa without being affected by substrate materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 750: Symposium Y – Surface Engineering 2002–Synthesis, Characterization and Applications , 2002 , Y8.23
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Oliver, W. C. and Pharr, G. M., J. Mat. Res. 7, 1564 (1992).Google Scholar
2. Mencik, J. and Swain, M. V., Materials Forum 18, 277 (1994).Google Scholar
3. Wittling, M., Bendavid, A., Martin, P. J. and Swain, M. V., Thin Solid Films 270, 283 (1995).Google Scholar
4. Tsui, T. Y., Vlassak, J. and Nix, W. D., J. Mat. Res. 14, 2196 (1999).Google Scholar
5. Tsui, T. Y., Vlassak, J. and Nix, W. D., J. Mat. Res., 2204 (1999).Google Scholar
6. Miyabe, S., Aono, M., Kitazawa, N. and Watanabe, Y. in Thin Films: Stresses and Mechanical Properties IX, edited by Ozkan, C. S., Freund, L. B., Cammarata, R. C. and Gao, H. (Mater. Res. Soc. Proc. 695, Warrendale, PA, 2002) pp.203–208.Google Scholar
7. Watanabe, Y., Surface Engineering 14, 427 (1998).Google Scholar
8. Mann, A. B., van Heerden, D., Pethica, J. B. and Weihs, T. P., J. Mat. Res. 15, 1754 (2000).Google Scholar
9. Wittling, M., Bendavid, A., Martin, P. J. and Swain, M. V., Thin Solid Films 270, 283 (1995).Google Scholar