Hostname: page-component-76fb5796d-skm99 Total loading time: 0 Render date: 2024-04-29T22:09:19.342Z Has data issue: false hasContentIssue false
  • English
  • Français

The Effects of Surface and Interface Depletion Regions on the Photoconductivity of a-Si:H in Surface Cell Structures

Published online by Cambridge University Press:  26 February 2011

GN Parsons ,
C Kusano  and
G Lucovsky
GN Parsons
Affiliation:
Department of Physics, NC State Univ, Raleigh NC 27965–8202
C Kusano
Affiliation:
Hitachi Central Research Laboratory, Tokyo, Japan
G Lucovsky
Affiliation:
Department of Physics, NC State Univ, Raleigh NC 27965–8202
Get access

Abstract

We have studied the optical, electrical and photoelectronic properties of a-Si:H thin films in surface cell structures. We have concluded that upward band bending in the form of depletion layers at the film surface and film oxide glass interface causes the electrical properties to display a thickness dependence. We find that the measured values of the quantum efficiency, mobility, lifetime product, hereafter nuT, also displays a thickness dependence. We show how the limiting bulk values for nuT and other electronic properties can be determined.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 589
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Brodsky, M H, Evangelisti, F, Fischer, R, Johnson, R.W, Reuter, W and Solomon, I, Solar Cells 2, 401 (1980).CrossRefGoogle Scholar
2. Solomon, I and Brodsky, M H, J Appl Phys 51, 4548 (1980).Google Scholar
3. Fritzsche, H, Solar Energy Materials 3, 447 (1980).CrossRefGoogle Scholar
4. Street, RA, Thompson, MJ and Johnson, NM, Philos Mag B 51, 1 (1985).CrossRefGoogle Scholar
5. Tanielian, M, Philos Mag B 45, 435 (1982).Google Scholar
6. Tanielian, M, Fritzsche, H, Tsai, C C and Symbalisty, E, Appl Phys Lett 33, 353 (1978).CrossRefGoogle Scholar
7. Solomon, I, Dietl, T and Kaplan, D, J de Physique 39, 1241 (1978).CrossRefGoogle Scholar
8. Jackson, WB, Biegelsen, DK, Nemanich, RJ and Knights, JC, Appl Phys Lett 42, 105 (1983).Google Scholar
9. Solomon, I, Benferhat, R and Tran-Quoc, H, Phys Rev B 30, 3422 (1984).Google Scholar
10. Muller, G, Demond, F, Kalbitzer, S, Damjantschitsch, H, Mannsperger, H, Spear, WE, LeComber, PG and Gibson, RA, Philos Mag B 41, 571 (1980).Google Scholar
11. Rudder, RA, Parsons, G N, Cook, JW Jr, and Lucovsky, G, J Non-Cryst Solids 77&78, 885 (1985).CrossRefGoogle Scholar
12. Rudder, R A, Cook, JW Jr, and Lucovsky, G, Appl Phys Lett 45, 887 (1984).CrossRefGoogle Scholar
13. Rudder, R A, Cook, JW Jr, and Lucovsky, G, J Vac Sci Tech A 2, 326 (1984).Google Scholar
14. Parsons, GN, Kusano, C and Lucovsky, G, J Vac Sei Tech A 5 (July/August 1987) (in press).Google Scholar
15. Parsons, GN, Kusano, C and Lucovsky, G, in Fritzsche Birthday Issue, Ed. by Kastner, M (Plenum Press, New York), (in press).Google Scholar
16. Rose, A, Concepts in Photoconductivity and Allied Problems, (Wiley, New York, 1963).Google Scholar
17. Cohen, JD, in Semiconductors and Semimetals, Vol 21, part C, Ed by Pankove, J (Academic Press, New York, 1984).Google Scholar